Radar Pulsed Power Transistor, 2W, loops Pulse, 10 Duty 1.2 - 1.4 GHz

Features • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • Interdigitated Geometry • Diffused Emitter Ballasting Resistors • Gold Metalization System • Internal Input Impedance Matching • Hermetii: Metal/Ceramic Package

Radar Pulsed Power Transistor

Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami

Bipolar

Radar Pulsed Power Transistor 2W, 1.2-1.4 GHz, 100關s Pulse, 10 Duty

文件：143.04 Kbytes Page：3 Pages

Radar Pulsed Power Transistor

文件：143.04 Kbytes Page：3 Pages

9...25 A Switching Regulators

Input voltage up to 144 VDC Single output of 3.3 to 48 VDC No input-to-output isolation • RoHS lead solder exemption compliant • Efficiency up to 97 • Low input-output differential voltage • No derating over temperature

9 - 25 A Switching Regulator

Input voltage up to 144 VDC Single output of 3.3 to 48 VDC No input-to-output isolation • RoHS lead solder exemption compliant • Efficiency up to 97 • Low input-output differential voltage • No derating over temperature