Radar Pulsed Power Transistor

Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami

Radar Pulsed Power Transistor, 25W, 300us Pulse, 10 Duty 1.2 - 1.4 GHz

Features • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • High Efficiency Interdigitated Geometry • Diffused Emitter Ballasting Resistors • Gold Metalization System • Internal Input Impedance Matching • Hermetic Metal/Ceramic Package

Radar Pulsed Power Transistor 25W, 1.2-1.4 GHz, 300關s Pulse, 10 Duty

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Bipolar

Radar Pulsed Power Transistor

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Radar Pulsed Power Transistor - 25 Watts, 1.20-1.40 GHz, 150mS Pulse, 10 Duty

Description M/A-COM’s PH1214-25M is a silicon bipolar NPN power transistor designed for use in L-band, 1.2 - 1.4 GHz pulsed radars such as air traffic control and long-range weather radars. Designed for common-base, class C, broadband pulsed power applications, the PH1214-25M can produce 25 watts

Radar Pulsed Power Transistor

Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami