Radar Pulsed Power Transistor

Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami

Radar Pulsed Power Transistor - 220 Watts,1.20-1.40 GHz, 150ms Pulse, 10 Duty

Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami

Bipolar

·NPN Silicon Microwave Power Transistors\n·RoHS Compliant\n·Hermetic Metal/Ceramic Package\n·Diffused Emitter Ballasting Resistors\n·High Efficiency Inter-Digitized Geometry\n·Broadband Class C Operation\n·Common Base Configuration\n·Gold Metallization System\n·InternalInput and Output Impedance Mat;

Radar Pulsed Power Transistor 220W, 1.2-1.4 GHz, 150關s Pulse, 10 Duty

文件：148.81 Kbytes Page：3 Pages

Radar Pulsed Power Transistor 220W, 1.2-1.4 GHz, 150關s Pulse, 10 Duty

文件：139.04 Kbytes Page：3 Pages

Radar Pulsed Power Transistor 220W, 1.2-1.4 GHz, 150關s Pulse, 10 Duty

文件：139.04 Kbytes Page：3 Pages

Radar Pulsed Power Transistor

文件：661.58 Kbytes Page：4 Pages

220 Watts - 40 Volts, 150ms, 10 Radar 1200 - 1400 MHz

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