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型号 功能描述 生产厂家 企业 LOGO 操作
PF01412

MOS FET Power Amplifier Module for E-GSM Handy Phone

Features • High gain 3stage amplifier : 0 dBm input • Lead less thin & Small package : 2 mm Max, 0.2cc • High efficiency : 45 Typ at 3.8 W • Wide gain control range : 90 dB Typ Application • For GSM class4 890 to 915 MHz • For 5.5V nominal DC/DC converter use

HITACHIHitachi Semiconductor

日立日立公司

MOS FET Power Amplifier Module for E-GSM Handy Phone

Features • High gain 3stage amplifier : 0 dBm input • Lead less thin & Small package : 2 mm Max, 0.2cc • High efficiency : 45 Typ at 3.8 W • Wide gain control range : 90 dB Typ Application • For GSM class4 890 to 915 MHz • For 5.5V nominal DC/DC converter use

HITACHIHitachi Semiconductor

日立日立公司

MOS FET Power Amplifier Module for E-GSM Handy Phone

HITACHIHitachi Semiconductor

日立日立公司

UTG - Metalok Bantam

Description “UTG” Metalok Bantam plastic industrial circular connectors with metal coupling are a range of multiway connectors to provide the complete answer to the need for leightweight, robust circular connectors. They are available in 8 shell sizes, 11 insert arrangements all intermateab

EATON

伊顿

UTG - Metalok Bantam

Description “UTG” Metalok Bantam plastic industrial circular connectors with metal coupling are a range of multiway connectors to provide the complete answer to the need for leightweight, robust circular connectors. They are available in 8 shell sizes, 11 insert arrangements all intermateab

EATON

伊顿

wide range in current capability

文件:2.97035 Mbytes Page:101 Pages

FCI-CONNECTOR

PF01412产品属性

  • 类型

    描述

  • 型号

    PF01412

  • 制造商

    HITACHI

  • 制造商全称

    Hitachi Semiconductor

  • 功能描述

    MOS FET Power Amplifier Module for E-GSM Handy Phone

更新时间:2026-5-19 15:34:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
HIT
ROHS
13352
一级代理 原装正品假一罚十价格优势长期供货
HITACHI
15+
QFN
6698

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