位置：首页 > IC中文资料第5896页 > PF01411B
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
PF01411B | MOSFETPowerAmplifierModuleforE-GSMHandyPhone Features •Highgain3stageamplifier:0dBminput •Leadlessthin&Smallpackage:2mmMax,0.2cc •Highefficiency:45Typat35.5dBm •Widegaincontrolrange:70dBTyp Application •ForE-GSMclass4880to915MHz •For3.5Vnominalbatteryuse | HitachiHitachi, Ltd. 日立公司 |  |   |
MOSFETPowerAmplifierModuleforE-GSMHandyPhone Features •Highgain3stageamplifier:0dBminput •Leadlessthin&Smallpackage:2mmMax,0.2cc •Highefficiency:45Typat3.8W •Widegaincontrolrange:90dBTyp Application •ForE-GSMclass4880to915MHz •For4.8Vnominalbatteryuse | HitachiHitachi, Ltd. 日立公司 | | | |
MOSFETPowerAmplifierModuleforE-GSMHandyPhone Features •Highgain3stageamplifier:0dBminput •Leadlessthin&Smallpackage:2mmMax,0.2cc •Highefficiency:45Typat3.8W •Widegaincontrolrange:90dBTyp Application •ForE-GSMclass4880to915MHz •For4.8Vnominalbatteryuse | HitachiHitachi, Ltd. 日立公司 | | | |
Carolprene짰JacketedTypeSOOW/SJOOW 文件：127.94 Kbytes Page：2 Pages | GENERALGeneral Electric 通用电气公司美国通用电气公司 |  | |
PF01411B产品属性
- 类型
描述
- 型号
PF01411B
- 制造商
HITACHI
- 制造商全称
Hitachi Semiconductor
- 功能描述
MOS FET Power Amplifier Module for E-GSM Handy Phone
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HITACHI |
23+ |
SMD |
8560 |
受权代理!全新原装现货特价热卖! |
|||
RENESAS-瑞萨 |
24+25+/26+27+ |
SMD-贴片 |
18800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
HITACHI |
18+ |
QFN |
85600 |
保证进口原装可开17%增值税发票 |
|||
HIT |
23+ |
589610 |
新到现货 原厂一手货源 价格秒杀代理! |
||||
HITACHI |
23+ |
进口原装 |
9000 |
全新原装热卖/假一罚十!更多数量可订货 |
|||
HITACHI |
22+ |
功放 |
4897 |
绝对原装!现货热卖! |
|||
HITACHI/日立 |
02+ |
SMD |
880000 |
明嘉莱只做原装正品现货 |
|||
HI |
23+ |
NA |
20000 |
全新原装假一赔十 |
|||
HIT |
ROHS |
13352 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
JAPAN |
22+23+ |
QFN |
17439 |
绝对原装正品全新进口深圳现货 |
PF01411B芯片相关品牌
PF01411B规格书下载地址
PF01411B参数引脚图相关
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DdatasheetPDF页码索引
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