MOS FET Power Amplifier Module for AMPS Handy Phone

Features • Low voltage operation : 4.6 V • 2 stage amplifier : +8 dBm input • Lead less small package : 0.2 cc • High efficiency : 48 Typ at 1 W • Low power control current : 500 µA Typ

MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone

MOS FET Power Amplifier Module\nfor E-GSM900 and DCS1800 Dual Band Handy Phone •  1 in / 2 out dual band amplifier\n•  Simple external circuit including output matching circuit\n•  Simple band switching and power control\n•  High gain 3stage amplifier : +1 dBm input for GSM, +4.5 dBm input for DCS\n•  Lead less thin & Small package : 11 ×13.75 ×1.8 mm\n•  High efficiency : 45&;

Ultra-Low Jitter LVCMOS Fanout Buffer and Level Translator

文件：1.18467 Mbytes Page：30 Pages

Ultra-low Jitter LVCMOS Fanout Buffer/Level Translator

文件：1.52736 Mbytes Page：15 Pages

Ultra-low Jitter LVCMOS Fanout Buffer/Level Translator

文件：1.52736 Mbytes Page：15 Pages

Accessories & Service

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