MOS FET Power Amplifier Module for AMPS Handy Phone

Features • Low voltage operation : 4.6 V • 2 stage amplifier : +8 dBm input • Lead less small package : 0.2 cc • High efficiency : 48 Typ at 1 W • Low power control current : 500 µA Typ

MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone

LMK00105 Ultra-Low Jitter LVCMOS Fanout Buffer and Level Translator With Universal

1 Features 1• 5 LVCMOS Outputs, DC to 200 MHz • Universal Input – LVPECL – LVDS – HCSL – SSTL – LVCMOS and LVTTL • Crystal Oscillator Interface – Crystal Input Frequency: 10 to 40 MHz • Output Skew: 6 ps • Additive Phase Jitter – 30 fs at 156.25 MHz (12 kHz to 20 MHz) • Low Propagatio

Ultra-Low Jitter LVCMOS Fanout Buffer and Level Translator

文件：1.18467 Mbytes Page：30 Pages

Ultra-low Jitter LVCMOS Fanout Buffer/Level Translator

文件：1.52736 Mbytes Page：15 Pages

Ultra-low Jitter LVCMOS Fanout Buffer/Level Translator

文件：1.52736 Mbytes Page：15 Pages

Ultra-Low Jitter LVCMOS Fanout Buffer and Level Translator

文件：1.18467 Mbytes Page：30 Pages