NPN/NPN resistor-equipped transistors; R1 = 22 kOMH, R2 = 22 kOHM

DESCRIPTION NPN/NPN resistor-equipped transistors (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • Low current peripheral driver

NPN/NPN resistor-equipped transistors; R1 = 22 k廓, R2 = 22 k廓

PNP/PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k

Features and benefits  100 mA output current capability  Built-in bias resistors  Simplifies circuit design  Reduces component count  Reduces pick and place costs  AEC-Q101 qualified

NPN/NPN resistor-equipped double transistor; R1=22kΩ,R2=22kΩ

NPN resistor-equipped transistors; R1 = 2.2 kohm, R2 = 47 kohm

DESCRIPTION NPN/NPN resistor-equipped transistors (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • Low current periphera

NPN/NPN resistor-equipped transistors; R1 = 2.2 kohm, R2 = 47 kohm

DESCRIPTION NPN/NPN resistor-equipped transistors (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • Low current periphera

NPN/NPN resistor-equipped transistors; R1 = 2.2 k廓, R2 = 47 k廓

NPN/NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47k

1.1 General description NPN/NPN Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages. 1.2 Features and benefits 1.3 Applications  Low current peripheral driver  Control of IC inputs  Replaces general-purpose transistors in digital applications Table 1. Pr

PNP/PNP resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k

Features and benefits  100 mA output current capability  Built-in bias resistors  Simplifies circuit design  Reduces component count  Reduces pick and place costs  AEC-Q101 qualified

NPN resistor-equipped transistors; R1 = 10 kohm, R2 = 10 kohm

DESCRIPTION NPN resistor-equipped transistors in a SOT666 plastic package. FEATURES • 300 mW total power dissipation • Very small 1.6 × 1.2 mm ultra thin package • Self alignment during soldering due to straight leads • Replaces two SC-75/SC-89 packaged transistors on same PCB area • Reduce

NPN/NPN resistor-equipped transistors; R1 = 10 k廓, R2 = 10 k廓

50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 10 kΩ, R2 = 10 kΩ

1. General description NPN/NPN double Resistor-Equipped Transistor (RET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PEMD3 PNP/PNP complement: PEMB11 2. Features and benefits • 100 mA output current capability • Built-in bias re

NPN resistor-equipped transistors; R1 = 4.7 kohm, R2 = 47 kohm

DESCRIPTION NPN/NPN resistor-equipped transistors (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplifies circuit design • Reduces component count • Reduces pick and place costs. APPLICATIONS • Low current peri

NPN/NPN resistor-equipped transistors; R1 = 4.7 kOHM, R2 = 47 kOHM

Developed especially for the automotive sector, 500 mA RETs combine a transistor with two resistors to provide an optimal integrated solution for digital applications in automotive systems, for example control units. Also an extensive portfolio with single and double 100 mA RETs is available for s

NPN/NPN resistor-equipped transistors; R1 = 4.7 k廓, R2 = 47 k廓

50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 4.7 kΩ, R2 = 47 kΩ

1. General description NPN/NPN double Resistor-Equipped Transistor (RET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PEMD13 PNP/PNP complement: PEMB13 2. Features and benefits • 100 mA output current capability • Built-in bias r

NPN/NPN resistor-equipped transistors R1 = 47 kW-ohm, R2 = open

General description NPN/NPN Resistor-Equipped Transistors (RET). Features ■ Built-in bias resistor ■ Simplifies circuit design ■ Reduces component count ■ Reduces pick and place costs Applications ■ Low current peripheral driver ■ Control of IC inputs ■ Replaces general-purpose transisto

NPN/NPN resistor-equipped transistors; R1 = 47 k廓, R2 = open

PNP/PNP resistor-equipped transistors; R1 = 47 kW, R2 = open

Features * Built-in bias resistors * Simplifies circuit design * Reduces component count * Reduces pick and place cost

NPN/NPN resistor-equipped transistors; R1 = 4.7 k廓, R2 = 4.7 k廓

PNP/PNP resistor-equipped transistors; R1 = 4.7 k, R2 = 4.7 k

Features and benefits  100 mA output current capability  Built-in bias resistors  Simplifies circuit design  Reduces component count  Reduces pick and place costs  AEC-Q101 qualified

NPN/NPN resistor-equipped transistors; R1 = 4.7 k, R2 = 4.7 k

1.1 General description NPN/NPN double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages. 1.2 Features and benefits 1.3 Applications Table 1. Product overview Type number Package NPN/PNP complement PNP/PNP complement Package NXP JEITA configuration PE

NPN/NPN resistor-equipped transistors; R1 = 4.7 k, R2 = 4.7 k

1.1 General description NPN/NPN double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages. 1.2 Features and benefits 1.3 Applications Table 1. Product overview Type number Package NPN/PNP complement PNP/PNP complement Package NXP JEITA configuration PE

NPN/NPN resistor-equipped transistors;

PNP/PNP resistor-equipped transistors; R1 = 22 kW, R2 = 47 kW

Features * Built-in bias resistors * Simplifies circuit design * Reduces component count * Reduces pick and place cost

NPN/NPN resistor-equipped transistors; R1 = 47 k廓, R2 = 22 k廓

PNP/PNP resistor-equipped transistors; R1 = 47 kW, R2 = 22 kW

Features * Built-in bias resistors * Simplifies circuit design * Reduces component count * Reduces pick and place cost

NPN/NPN resistor-equipped transistors; R1 = 4.7 k廓, R2 = 10 k廓

PNP/PNP resistor-equipped transistors; R1 = 4.7 k, R2 = 10 k

Features and benefits  100 mA output current capability  Built-in bias resistors  Simplifies circuit design  Reduces component count  Reduces pick and place costs  AEC-Q101 qualified

NPN/PNP resistor-equipped transistors

General description NPN/PNP resistor-equipped transistors. Features ■ Built-in bias resistors ■ Simplifies circuit design ■ Reduces component count ■ Reduces pick and place cost Applications ■ Low current peripheral driver ■ Control of IC inputs ■ Replacement of general-purpose transisto

NPN/NPN resistor-equipped transistors; R1 = 22 k廓, R2 = open

PNP/PNP resistor-equipped transistors; R1 = 22 kW, R2 = open

Features * Built-in bias resistors * Simplifies circuit design * Reduces component count * Reduces pick and place cost

NPN/NPN resistor-equipped transistors R1 = 22 k?? R2 = 22 k?

文件：629.21 Kbytes Page：14 Pages

NPN/NPN resistor-equipped transistors R1 = 2.2 k?? R2 = 47k?

文件：629.23 Kbytes Page：15 Pages

NPN/NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ

NPN/NPN resistor-equipped transistors R1 = 10 k?? R2 = 10 k?

文件：622.78 Kbytes Page：14 Pages

NPN/NPN double Resistor-Equipped Transistor; R1=4.7kΩ,R2=47kΩ

NPN/NPN resistor-equipped transistors R1 = 4.7 k?? R2 = 47 k?

文件：623.68 Kbytes Page：14 Pages

NPN/NPN resistor-equipped transistors R1 = 47 k廓, R2 = open

文件：101.54 Kbytes Page：8 Pages

NPN/NPN resistor-equipped transistors R1 = 4.7 k?? R2 = 4.7 k?

文件：623.06 Kbytes Page：14 Pages

NPN/NPN resistor-equipped transistors R1 = 22 k廓, R2 = 47 k廓

文件：284.33 Kbytes Page：9 Pages

NPN/NPN resistor-equipped transistors R1 = 47 k廓, R2 = 22 k廓

文件：282.9 Kbytes Page：9 Pages

NPN/NPN resistor-equipped transistors R1 = 4.7 k?? R2 = 10 k?

文件：589.28 Kbytes Page：14 Pages

NPN/NPN resistor-equipped transistors

文件：260.149 Kbytes Page：8 Pages