NPN/PNP resistor-equipped transistors; R1 = 4.7 k廓, R2 = open

丝印代码：D6；50 V, 100 mA NPN/PNP Resistor-Equipped Transistor; R1 = 4.7 kΩ, R2 = open

1. General description NPN/PNP Resistor-Equipped Transistor (RET) in a ultra small flat lead SOT666 Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PEMH7 PNP/PNP complement: PEMB3 2. Features and benefits • Built-in bias resistors • Simplifies circuit design • Reduces c

PNP/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open

FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • Low current peripheral drivers • Replacement of general purpose transistors in digital applications • Control of IC inputs. DESCRIPTION PNP/PN

丝印代码：D6；NPN/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open

FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • Low current peripheral driver • Replacement of general purpose transistors in digital applications • Control of IC inputs. DESCRIPTION NPN/PNP

NPN/PNP resistor-equipped transistors; R1 = 4.7 kOhm, R2 = open

NPN/PNP resistor-equipped transistors (see \"_Data_Sheet_Remark Supersedes data of 2003 Nov 04\" for package details). • Built-in bias resistors\n• Simplified circuit design\n• Reduction of component count\n• Reduced pick and place costs.\n• AEC-Q101 qualified;

NPN/PNP resistor-equipped transistors; R1 = 4.7 kohm, R2 = open

DESCRIPTION NPN/PNP resistor-equipped transistors in a SOT666 plastic package. FEATURES • 300 mW total power dissipation • Very small 1.6 × 1.2 mm ultra thin package • Self alignment during soldering due to straight leads • Replaces two SC-75/SC-89 packaged transistors on same PCB area • Re

NPN/PNP resistor-equipped transistors; R1 = 4.7 k廓, R2 = open

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