MOSFET

The PE8340M uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. • VDS 30V, ID =35A\n• Good stability and uniformity with high EAS\n• Excellent package for good heat dissipation;

80 Amp Rectifier 20 to 45 Volts Schottky Barrier

Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability

InGaAs PIN photodiode with preamp

InGaAs PIN photodiode with preamp Pigtail type, 1.3/1.55 µm, 156, 622 Mbps/1.25, 2.5 Gbps G8340/G8343/G8211/G8797 series are high-speed receivers specifically developed for 1.3/1.55 µm band optical fiber communications. These devices incorporate a high-speed, high-sensitivity InGaAs PIN photodi

Low Dropout, Low IQ, 1.0A CMOS Linear Regulator

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Low Dropout, Low IQ, 1.0A CMOS Linear Regulator

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Television IF amplifier and demodulator

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