50 廓 RF Digital Attenuator 5-bit, 31 dB, DC - 4.0 GHz

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PNP Epitaxial Silicon Transistor

Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=10KΩ, R2=47KΩ) • Complement to FJN3306R

POW-R-BLOK Dual SCR Isolated Module (600 Amperes / Up to 2400 Volts)

Description: Powerex Dual SCR Modules are designed for use in applications requiring phase control and isolated packaging. The modules are isolated for easy mounting with other components on a common heatsink. Features: ■ Electrically Isolated Heatsinking ■ Compression Bonded Elements ■ Metal

DUAL N-CHANNEL ENHANCEMENT MODE MOSFETS

SM-8 DUAL N-CHANNEL ENHANCEMENT MODE MOSFETS PARTMARKING DETAIL – M4306N

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

FEATURES * 60 Volt VDS * RDS(on)= 0.33Ω * Spice model available APPLICATIONS * DC-DC convertors * Solenoids / relay drivers for automotive

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

FEATURES * Very low RDS(ON) = .33Ω APPLICATIONS * DC - DC Converters * Solenoids/Relay Drivers for Automotive PARTMARKING DETAIL - ZVN4306