丝印代码：TC115E；PNP resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW

PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ DESCRIPTION PNP resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Re

丝印代码：TC115E；NPN resistor-equipped transistors; R1 = 100 k廓, R2 = 100 k廓

丝印代码：TC115E；NPN resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ

FEATURES •Built-in bias resistors •Simplified circuit design •Reduction of component count •Reduced pick and place costs. APPLICATIONS •General purpose switching and amplification •Inverter and interface circuits •Circuit driver.

PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ

FEATURES •Built-in bias resistors •Simplified circuit design •Reduction of component count •Reduced pick and place costs. APPLICATIONS •General purpose switching and amplification •Inverter and interface circuits •Circuit driver.

丝印代码：TC115E；NPN resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ

FEATURES •Built-in bias resistors •Simplified circuit design •Reduction of component count •Reduced pick and place costs. APPLICATIONS •General purpose switching and amplification •Inverter and interface circuits •Circuit driver.

丝印代码：TC115E；NPN resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW

文件：93.58 Kbytes Page：14 Pages

封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：卷带（TR） 描述：TRANS PREBIAS NPN 500MW TO92-3 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置

POWER TRANSISTORS(2.0A,60-100V,50W)

DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

Quad, Closed-Loop Monolithic Buffer

文件：350.02 Kbytes Page：6 Pages

Quad, Closed-Loop Monolithic Buffer

文件：350.02 Kbytes Page：6 Pages

Quad, Closed-Loop Monolithic Buffer

文件：350.02 Kbytes Page：6 Pages