PNP resistor-equipped transistors; R1 = 22 kohm, R2 = 47 kohm

DESCRIPTION PNP resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplif

PNP resistor-equipped transistors; R1 = 22 kW, R2 = 47 kW

PNP resistor-equipped transistors; R1 = 22 kW, R2 = 47 kW

Features * Built-in bias resistors * Simplifies circuit design * 100 mA output current capability * Reduces component count * Reduces pick and place costs

PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 47 kΩ

PNP resistor-equipped transistors; R1 = 22 kW, R2 = 47 kW

Features * Built-in bias resistors * Simplifies circuit design * 100 mA output current capability * Reduces component count * Reduces pick and place costs

PNP resistor-equipped transistors; R1 = 22 kW, R2 = 47 kW

Features * Built-in bias resistors * Simplifies circuit design * 100 mA output current capability * Reduces component count * Reduces pick and place costs

PNP resistor-equipped transistor

DESCRIPTION PNP resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplif

PNP resistor-equipped transistors; R1 = 22 kohm, R2 = 47 kohm

DESCRIPTION PNP resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplif

PNP resistor-equipped transistors; R1 = 22 kW, R2 = 47 kW

PNP resistor-equipped transistors; R1 = 22 kohm, R2 = 47 kohm

DESCRIPTION PNP resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplif

PNP resistor-equipped transistor

DESCRIPTION PNP resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplif

PNP resistor-equipped transistors; R1 = 22 kW, R2 = 47 kW

Features * Built-in bias resistors * Simplifies circuit design * 100 mA output current capability * Reduces component count * Reduces pick and place costs

PNP resistor-equipped transistors; R1 = 22 kW, R2 = 47 kW

PNP resistor-equipped transistors; R1 = 22 kW, R2 = 47 kW

Features * Built-in bias resistors * Simplifies circuit design * 100 mA output current capability * Reduces component count * Reduces pick and place costs

PNP resistor-equipped transistors; R1 = 22 kW, R2 = 47 kW

PNP resistor-equipped transistors; R1 = 22 kohm, R2 = 47 kohm

DESCRIPTION PNP resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplif

PNP resistor-equipped transistors; R1 = 22 kohm, R2 = 47 kohm

DESCRIPTION PNP resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplif

PNP resistor-equipped transistors; R1 = 22 kW, R2 = 47 kW

Features * Built-in bias resistors * Simplifies circuit design * 100 mA output current capability * Reduces component count * Reduces pick and place costs

PNP resistor-equipped transistors; R1 = 22 kW, R2 = 47 kW

PNP resistor-equipped transistor; R1 = 22 k廓, R2 = 47 k廓

General description PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC124XMB. Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■

50 V, 100 mA NPN resistor-equipped transistors

Features and benefits • 100 mA output current capability • Built-in resistors • Simplifies circuit design • Reduces component count • Reduces pick and place costs • Low package height of 0.5 mm • Suitable for Automatic Optical Inspection (AOI) of solder joint

50 V, 100 mA PNP resistor-equipped transistors

Features and benefits • 100 mA output current capability • Built-in resistors • Simplifies circuit design • Reduces component count • Reduces pick and place costs • Low package height of 0.5 mm • Suitable for Automatic Optical Inspection (AOI) of solder joint

50 V, 100 mA PNP resistor-equipped transistors

1. General description 100 mA PNP Resistor-Equipped Transistor (RET) family in an ultra small DFN1110D-3 (SOT8015) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks. Table 1. Product overview Type number R1 R2 Package kΩ kΩ Nexperia JEDEC NPN complement: PDTA14

50 V, 100 mA NPN resistor-equipped transistors

Features and benefits • 100 mA output current capability • Built-in resistors • Simplifies circuit design • Reduces component count • Reduces pick and place costs • Low package height of 0.5 mm • Suitable for Automatic Optical Inspection (AOI) of solder joint • Qualified according to AEC-Q

50 V, 100 mA NPN resistor-equipped transistors

Features and benefits • 100 mA output current capability • Built-in resistors • Simplifies circuit design • Reduces component count • Reduces pick and place costs • Low package height of 0.5 mm • Suitable for Automatic Optical Inspection (AOI) of solder joint

50 V, 100 mA PNP resistor-equipped transistors

Features and benefits • 100 mA output current capability • Built-in resistors • Simplifies circuit design • Reduces component count • Reduces pick and place costs • Low package height of 0.5 mm • Suitable for Automatic Optical Inspection (AOI) of solder joint

50 V, 100 mA NPN resistor-equipped transistors

Features and benefits • 100 mA output current capability • Built-in resistors • Simplifies circuit design • Reduces component count • Reduces pick and place costs • Low package height of 0.5 mm • Suitable for Automatic Optical Inspection (AOI) of solder joint • Qualified according to AEC-Q

50 V, 100 mA PNP resistor-equipped transistors

1. General description 100 mA PNP Resistor-Equipped Transistor (RET) family in an ultra small DFN1412D-3 (SOT8009) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks. Table 1. Product overview Type number R1 R2 Package kΩ kΩ Nexperia JEDEC NPN complement: PDTA14

PNP resistor-equipped transistors; R1 = 22 kohm, R2 = 47 kohm

DESCRIPTION PNP resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplif

PNP resistor-equipped transistors; R1 = 22 kW, R2 = 47 kW

PNP resistor-equipped transistors; R1 = 22 kW, R2 = 47 kW

Features * Built-in bias resistors * Simplifies circuit design * 100 mA output current capability * Reduces component count * Reduces pick and place costs

PNP resistor-equipped transistors; R1 = 22 kW, R2 = 47 kW

Features * Built-in bias resistors * Simplifies circuit design * 100 mA output current capability * Reduces component count * Reduces pick and place costs

PNP resistor-equipped transistors; R1 = 22 kohm, R2 = 47 kohm

DESCRIPTION PNP resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplif

PNP resistor-equipped transistors; R1 = 22 kW, R2 = 47 kW

PNP resistor-equipped transistor; R1 = 22 kΩ, R2 = 47 kΩ

1. General description PNP Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC124XT-Q 2. Features and benefits • Built-in bias resistors • Simplifies circuit design • 100 mA output current capability • Reduces component c

PNP resistor-equipped transistors; R1 = 22 kW, R2 = 47 kW

Features * Built-in bias resistors * Simplifies circuit design * 100 mA output current capability * Reduces component count * Reduces pick and place costs

PNP resistor-equipped transistors; R1 = 22 kohm, R2 = 47 kohm

DESCRIPTION PNP resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplif

PNP resistor-equipped transistors; R1 = 22 kW, R2 = 47 kW

PNP resistor-equipped transistor

PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 47 kΩ

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PREBIAS PNP 250MW SMT3 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置

封装/外壳：SC-101，SOT-883 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PREBIAS PNP 50V DFN1006-3 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置

Low VCEsat (BISS) transistors

文件：948.33 Kbytes Page：12 Pages

Low VCEsat (BISS) transistors

文件：948.33 Kbytes Page：12 Pages

High Current Cartridge Fuse Clips 124 Series > For For 10x38mm & 3AG/3AB Fuses

Features & Benefits ■ RoHS compliant and Lead-free ■ Designed for high-current applications, up to 63 Amp ■ Higher current raitings attained using high perfomance Cu alloy ■ Tin-plated leads for easy soldering process ■ UL Recognized to UL 4248-1 and CSA 4248.1 ■ Designed for applicati

Low-Power Quad Operational Amplifier

DESCRIPTION: Maxwell Technologies’s 124 independent, high gain, internally frequency compensated operational amplifiers feature a greater than 100 krad (Si) total dose tolerance, depending upon space mission. Using Maxwell’s radiation-hardened Rad-Pak® packaging technology, the 124 is designed sp

Customer Specification

Construction Diameters (In) 1) Component 1 8 X 1 COND a) Conductor 24 (19/36) AWG Bare Copper 0.025 b) Insulation 0.010 Wall, Nom. Polypropylene(PP) 0.045 (1) Color(s) Cond Color Cond Color Cond Color 1 WHITE 4 YELLOW 7 BLUE 2 BROWN 5 SLATE 8 RED 3 GREEN 6 PINK 2) Cable Assembly 8 Com

Customer SpecificationS

Construction Diameters (In) 1) Component 1 8 X 1 COND a) Conductor 24 (19/36) AWG Bare Copper 0.025 b) Insulation 0.010 Wall, Nom. Polypropylene(PP) 0.045 (1) Color(s) Cond Color Cond Color Cond Color 1 WHITE 4 YELLOW 7 BLUE 2 BROWN 5 SLATE 8 RED 3 GREEN 6 PINK 2) Cable Assembly 8 Com

Precision Machined Metric Punches

文件：203.88 Kbytes Page：1 Pages