丝印代码：-7C；PNP resistor-equipped transistors; R1 = 100 k廓, R2 = 100 k廓

NPN resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ

FEATURES •Built-in bias resistors •Simplified circuit design •Reduction of component count •Reduced pick and place costs. APPLICATIONS •General purpose switching and amplification •Inverter and interface circuits •Circuit driver.

丝印代码：7C；PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ

FEATURES •Built-in bias resistors •Simplified circuit design •Reduction of component count •Reduced pick and place costs. APPLICATIONS •General purpose switching and amplification •Inverter and interface circuits •Circuit driver.

丝印代码：-7C；PNP resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW

PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ DESCRIPTION PNP resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Re

PNP resistor-equipped transistors; R1 = 100 kOhm, R2 = 100 kOhm

PNP resistor-equipped transistor (see �Simplified outline, symbol and pinning� for package details). • Built-in bias resistors\n• Simplified circuit design\n• Reduction of component count\n• Reduced pick and place costs.\n• AEC-Q101 qualified;

丝印代码：-7C；Low VCEsat (BISS) transistors

文件：948.33 Kbytes Page：12 Pages

PNP resistor-equipped transistor; R1 = 100 kΩ, R2 = 100 kΩ

PNP Resistor-Equipped Transistor (RET) in a very small (SOT323) Surface-Mounted Device (SMD) plastic package.\n NPN complement: PDTC115EU

封装/外壳：SC-70，SOT-323 包装：卷带（TR） 描述：TRANS PREBIAS PNP 50V SOT323 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置

POWER TRANSISTORS(2.0A,60-100V,50W)

DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

Quad, Closed-Loop Monolithic Buffer

文件：350.02 Kbytes Page：6 Pages

Quad, Closed-Loop Monolithic Buffer

文件：350.02 Kbytes Page：6 Pages

Quad, Closed-Loop Monolithic Buffer

文件：350.02 Kbytes Page：6 Pages