PNP resistor-equipped transistor; R1 = 1 kΩ, R2 = 1 kΩ

PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.\n NPN complement: PDTC113EMB. • 100 mA output current capability\n• Built-in bias resistors\n• Simplifies circuit design\n• Leadless ultra small SMD plastic package\n• Low package height of 0.37 mm;

丝印代码：00011100；PNP resistor-equipped transistor; R1 = 1 k廓, R2 = 1 k廓

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封装/外壳：3-XFDFN 包装：卷带（TR） 描述：TRANS PREBIAS PNP 50V DFN1006B-3 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置

PNP SILICON BIAS RESISTOR TRANSISTOR

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The

0.25關m Sea of Gates and Customer Structured Arrays

DESCRIPTION Oki’s 0.25µm Application-Specific Integrated Circuit (ASIC) products are available in both Sea Of Gates (SOG) and Customer Structured Array (CSA) architectures. Both the SOG-based MG115P series and the CSA-based MG75P series use a five-layer metal process on 0.25µm drawn (0.18µm L-eff

6-Pin DIP Optoisolators Darlington Output

6-Pin DIP Optoisolators Darlington Output The MTIL113 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. This device is designed for use in applications requiring high collector output currents at lower input currents

Reference Diode

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Reference Diode

文件：126.55 Kbytes Page：4 Pages