InGaAs AVALANCHE PHOTO DIODES

DESCRIPTION PD8XX3 series are InGaAs avalanche photodiode which has a sensitive area of φ35 µ m, PD8XX3 is suitable for receiving the light having a wavelength band of 1000 to 1600nm. This photodiode features low noise, a high quantum efficiency and a high speed response is suitable for the light

InGaAs AVALANCHE PHOTO DIODES

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -20V , -4.3A , RDS(ON)=90mΩ @VGS=-4.5V. RDS(ON)=140mΩ @VGS=-2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface Mount Package.

Dual P-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 20 Volts CURRENT 4.6 Ampere FEATURE * Small flat package. (SO-8 ) * Super high dense cell design for extremely low RDS(ON). * High power and current handing capability. * Lead free product is acquired. APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switchi

50V CERAMIC DISC

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Advanced PMU for CoreLogic LUCY

文件：102.9 Kbytes Page：2 Pages

Advanced PMU for CoreLogic LUCY

文件：723.03 Kbytes Page：44 Pages