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PD8933

InGaAs AVALANCHE PHOTO DIODES

DESCRIPTION PD8XX3 series are InGaAs avalanche photodiode which has a sensitive area of φ35 µ m, PD8XX3 is suitable for receiving the light having a wavelength band of 1000 to 1600nm. This photodiode features low noise, a high quantum efficiency and a high speed response is suitable for the light

MITSUBISHI

三菱电机

PD8933

InGaAs AVALANCHE PHOTO DIODES

MITSUBISHI

三菱电机

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -20V , -4.3A , RDS(ON)=90mΩ @VGS=-4.5V. RDS(ON)=140mΩ @VGS=-2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface Mount Package.

CET

华瑞

Class D audio amplifier

ETC

知名厂家

Class D audio amplifier

ETC

知名厂家

50V CERAMIC DISC

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NTE

PD8933产品属性

  • 类型

    描述

  • 型号

    PD8933

  • 制造商

    MITSUBISHI

  • 制造商全称

    Mitsubishi Electric Semiconductor

  • 功能描述

    InGaAs AVALANCHE PHOTO DIODES

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