HF to 2000 MHz Class AB Common Source - PowerSO-10RF

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to

RF power transistor - LdmoST family

Description The PD85025C is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85025C boasts the excellen

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The PD85025-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85025-E boasts the excell

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The PD85025-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85025-E boasts the excell

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The PD85025-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85025-E boasts the excell

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The PD85025-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85025-E boasts the excell

25W 13.6V 870MHz LDMOS in M243 ceramic package

封装/外壳：PowerSO-10RF 裸露底部焊盘（2 条成形引线） 包装：托盘 描述：FET RF 40V 870MHZ 分立半导体产品 晶体管 - FET，MOSFET - 射频

25W 13.6V 870MHz LDMOS in PowerSO-10RF plastic package

封装/外壳：PowerSO-10 裸露底部焊盘 包装：托盘 描述：FET RF 40V 870MHZ 分立半导体产品 晶体管 - FET，MOSFET - 射频

射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER R.F. N-Ch Trans

20 (63(7x9)/38) AWG Bare Copper

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20 (63(7x9)/38) AWG Bare Copper

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