HF to 2000 MHz Class AB Common Source - PowerSO-10RF

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to

RF power transistor - LdmoST family

Description The PD85025C is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85025C boasts the excellen

25W 13.6V 870MHz LDMOS in M243 ceramic package

The PD85025C is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85025C boasts the excellent gain, lineari Excellent thermal stability\nCommon source configuration\nPOUT = 25 W with 16 dB gain @ 945 MHz / 13.6 V\nBeO free package\nESD protection\nIn compliance with the 2002/95/EC european directive;

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The PD85025-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85025-E boasts the excell

25W 13.6V 870MHz LDMOS in PowerSO-10RF plastic package

The PD85025-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85025-E boasts the excellent gain, linea • Excellent thermal stability\n• Common source configuration\n• POUT = 25 W with 15.7 dB gain @ 870 MHz / 13.6 V• Plastic package\n• ESD protection\n• In compliance with the 2002/95/EC European directive;

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The PD85025-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85025-E boasts the excell

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The PD85025-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85025-E boasts the excell

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The PD85025-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85025-E boasts the excell

封装/外壳：PowerSO-10RF 裸露底部焊盘（2 条成形引线） 包装：托盘 描述：FET RF 40V 870MHZ 分立半导体产品 晶体管 - FET，MOSFET - 射频

封装/外壳：PowerSO-10 裸露底部焊盘 包装：托盘 描述：FET RF 40V 870MHZ 分立半导体产品 晶体管 - FET，MOSFET - 射频

射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER R.F. N-Ch Trans