HF to 2000 MHz Class AB Common Source - PowerSO-10RF

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The PD85015-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85015-E boasts the excell

15W 13.6V 870MHz LDMOS in powerSO-10RF plastic package

The PD85015-E is a common source N-channel, enhancement-mode, lateral field-effect RF power transistor. It is designed for high gain, broadband, commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. The PD85015-E boasts excellent gain, lin • Excellent thermal stability\n• Common source configuration\n• POUT = 15 W with 16 dB gain @ 870 MHz / 13.6 V• Plastic package\n• ESD protection\n• In compliance with the 2002/95/EC European directive;

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The PD85015-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85015-E boasts the excell

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The PD85015-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85015-E boasts the excell

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The PD85015-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85015-E boasts the excell

封装/外壳：PowerSO-10 裸露底部焊盘 包装：托盘 描述：IC RF PWR TRANSISTOR PWRSO-10RF 分立半导体产品 晶体管 - FET，MOSFET - 射频

封装/外壳：PowerSO-10RF 裸露底部焊盘（2 条直引线） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS RF N-CH FET POWERSO-10RF 分立半导体产品 晶体管 - FET，MOSFET - 射频

TRANS RF N-CH FET POWERSO-10RF

射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER R.F. N-Ch Trans

AC Motor Start Capacitors Non-polarized, Aluminum Electrolytic AC Motor Start Capacitors

Non-polarized, Aluminum Electrolytic AC Motor Start Capacitors The Type PSU is a compact non-polar, dual voltage rated, AC motor start capacitor constructed in a round rugged bakelite case. To extend the life of relay contact switches, the PSU can be purchased with optional bleeder resist

AC Motor Start Capacitors Non-polarized, Aluminum Electrolytic AC Motor Start Capacitors

Non-polarized, Aluminum Electrolytic AC Motor Start Capacitors The Type PSU is a compact non-polar, dual voltage rated, AC motor start capacitor constructed in a round rugged bakelite case. To extend the life of relay contact switches, the PSU can be purchased with optional bleeder resist