封装/外壳：PowerSO-10 裸露底部焊盘 包装：带 描述：FET RF 40V 500MHZ PWRSO-10 分立半导体产品 晶体管 - FET，MOSFET - 射频

RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent ga

HF to 2000 MHz Class AB Common Source - PowerSO-10RF

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to

RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent ga

RF POWER TRANSISTORS The LdmoST Plastic FAMILY

文件：289.23 Kbytes Page：13 Pages

RF POWER TRANSISTORS The LdmoST Plastic FAMILY

文件：289.23 Kbytes Page：13 Pages