PD54价格
参考价格：￥49.1668
型号：PD54003-E 品牌：STM 备注：这里有PD54多少钱，2026年最近7天走势，今日出价，今日竞价，PD54批发/采购报价，PD54行情走势销售排行榜，PD54报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
HF to 2000 MHz Class AB Common Source - PowerSO-10RF HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to | ETCList of Unclassifed Manufacturers 未分类制造商 |   | ||
RF POWER transistor, LDMOST plastic family N-channel enhancement-mode, lateral MOSFETs Description The PD54003 is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7V in common source mode at frequencies of up to 1GHz. The PD54003 features the excelle | STMICROELECTRONICS 意法半导体 | | ||
RF POWER TRANSISTORS The LdmoST PLASTIC FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs DESCRIPTION The PD54003L is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7 V in common source mode at frequenc | STMICROELECTRONICS 意法半导体 | | ||
HF to 2000 MHz Class AB Common Source - PowerSO-10RF HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
RF Power Transistors The LdmoST Plastic FAMILY Description The PD54003L-E is a common source N-Channel, enhancement-mode lateral Field Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7 V in common source mode at frequencies of up to 1 GHz. PD54003L-E boasts the exce | STMICROELECTRONICS 意法半导体 | | ||
RF Power LDMOS transistor The PD54003L-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial application. It operates at 7 V in common source mode at frequencies of up to 1 GHz. PD54003L-E boasts the excellent gain, lineari Excellent thermal stability\nCommon source configuration\nP\nOUT=3 W mith 20dB gain@500 MHz\nNew leadless plastic package\nESD protection\nSupplied in tape and reel of 3 K units\nIn compliance with 2002/95/EC european directive; | STMICROELECTRONICS 意法半导体 | | ||
RF POWER transistor, LDMOST plastic family N-channel enhancement-mode, lateral MOSFETs Description The PD54003 is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7V in common source mode at frequencies of up to 1GHz. The PD54003 features the excelle | STMICROELECTRONICS 意法半导体 | | ||
RF POWER transistor, LDMOST plastic family N-channel enhancement-mode, lateral MOSFETs Description The PD54003 is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7V in common source mode at frequencies of up to 1GHz. The PD54003 features the excelle | STMICROELECTRONICS 意法半导体 | | ||
RF POWER transistor, LDMOST plastic family N-channel enhancement-mode, lateral MOSFETs Description The PD54003 is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7V in common source mode at frequencies of up to 1GHz. The PD54003 features the excelle | STMICROELECTRONICS 意法半导体 | | ||
HF to 2000 MHz Class AB Common Source - PowerSO-10RF HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
RF POWER TRANSISTORS The LdmoST Plastic FAMILY DESCRIPTION The PD54008 is a common source N-Channel, enhancement-mode, lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7V in common source mode at frequencies of up to 1GHz. PD54008 boasts the excellent gai | STMICROELECTRONICS 意法半导体 | | ||
RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode, lateral MOSFETs Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent | STMICROELECTRONICS 意法半导体 | | ||
RF功率LDMOS晶体管 The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain, linearity • Excellent thermal stability \n• Common source configuration \n• POUT = 8 W with 11.5dB gain @ 500 MHz/7.5 V \n• New RF plastic package; | STMICROELECTRONICS 意法半导体 | | ||
HF to 2000 MHz Class AB Common Source - PowerSO-10RF HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
RF POWER TRANSISTORS The LdmoST PLASTIC FAMILY HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 | STMICROELECTRONICS 意法半导体 | | ||
RF power transistors The LdmoST Plastic family Description The PD54008L-E is a common source N-Channel, enhancement-mode lateral FieldEffect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7 V in common source mode at frequencies of up to 1 GHz. PD54008L-E boasts the excelle | STMICROELECTRONICS 意法半导体 | | ||
RF POWER TRANSISTORS The LdmoST Plastic FAMILY DESCRIPTION The PD54008 is a common source N-Channel, enhancement-mode, lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7V in common source mode at frequencies of up to 1GHz. PD54008 boasts the excellent gai | STMICROELECTRONICS 意法半导体 | | ||
RF POWER TRANSISTORS The LdmoST Plastic FAMILY DESCRIPTION The PD54008 is a common source N-Channel, enhancement-mode, lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7V in common source mode at frequencies of up to 1GHz. PD54008 boasts the excellent gai | STMICROELECTRONICS 意法半导体 | | ||
RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode, lateral MOSFETs Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent | STMICROELECTRONICS 意法半导体 | | ||
RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode, lateral MOSFETs Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent | STMICROELECTRONICS 意法半导体 | | ||
RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode, lateral MOSFETs Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent | STMICROELECTRONICS 意法半导体 | | ||
RF POWER TRANSISTORS The LdmoST Plastic FAMILY 文件：115.69 Kbytes Page：10 Pages | STMICROELECTRONICS 意法半导体 | | ||
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs 文件：1.53332 Mbytes Page：27 Pages | STMICROELECTRONICS 意法半导体 | | ||
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs 文件：1.53332 Mbytes Page：27 Pages | STMICROELECTRONICS 意法半导体 | | ||
RF POWER TRANSISTORS The LdmoST PLASTIC FAMILY | STMICROELECTRONICS 意法半导体 | | ||
RF POWER TRANSISTORS The LdmoST Plastic FAMILY 文件：115.69 Kbytes Page：10 Pages | STMICROELECTRONICS 意法半导体 | | ||
RF POWER TRANSISTORS The LdmoST Plastic FAMILY 文件：115.69 Kbytes Page：10 Pages | STMICROELECTRONICS 意法半导体 | | ||
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs 文件：1.53332 Mbytes Page：27 Pages | STMICROELECTRONICS 意法半导体 | | ||
封装/外壳：PowerSO-10 裸露底部焊盘 包装：托盘 描述：TRANS RF N-CH FET POWERSO-10RF 分立半导体产品 晶体管 - FET，MOSFET - 射频 | STMICROELECTRONICS 意法半导体 | | ||
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs 文件：1.53332 Mbytes Page：27 Pages | STMICROELECTRONICS 意法半导体 | | ||
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs 文件：1.53332 Mbytes Page：27 Pages | STMICROELECTRONICS 意法半导体 | | ||
封装/外壳：PowerSO-10 裸露底部焊盘 包装：带 描述：FET RF 25V 500MHZ PWRSO-10 分立半导体产品 晶体管 - FET，MOSFET - 射频 | STMICROELECTRONICS 意法半导体 | | ||
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs 文件：822.57 Kbytes Page：29 Pages | STMICROELECTRONICS 意法半导体 | | ||
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs 文件：822.57 Kbytes Page：29 Pages | STMICROELECTRONICS 意法半导体 | | ||
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs 文件：822.57 Kbytes Page：29 Pages | STMICROELECTRONICS 意法半导体 | | ||
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs 文件：822.57 Kbytes Page：29 Pages | STMICROELECTRONICS 意法半导体 | | ||
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs 文件：822.57 Kbytes Page：29 Pages | STMICROELECTRONICS 意法半导体 | | ||
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs 文件：822.57 Kbytes Page：29 Pages | STMICROELECTRONICS 意法半导体 | | ||
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs 文件：822.57 Kbytes Page：29 Pages | STMICROELECTRONICS 意法半导体 | |
PD54产品属性
- 类型
描述
- Package：
PowerSO-10RF (formed lead)
- Marketing Status：
Active
- Grade：
Industrial
- Frequency_nom(MHz)：
500
- Output Power_nom(W)：
3
- Power Gain_nom(dB)：
12
- Transistor Supply Voltage_nom(V)：
7.5
- Efficiency_nom(%)：
55
- R_th(J-C)_max：
1.8
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
2517+ |
PowerFLAT5x5) |
8850 |
只做原装正品现货或订货假一赔十! |
|||
ST |
25+23+ |
QFN-14 |
20285 |
绝对原装正品全新进口深圳现货 |
|||
ST/意法半导体 |
26+ |
PowerFLAT (5x5) |
60000 |
只有原装 可配单 |
|||
ST/意法半导体 |
21+ |
PowerFLAT (5x5) |
8860 |
只做原装,质量保证 |
|||
ST |
25+ |
QFN |
4500 |
全新原装、诚信经营、公司现货销售! |
|||
ST |
2602+ |
QFN |
5989 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
ST(意法) |
26+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ST(意法) |
25+ |
8-PowerVDFN |
22412 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
ST |
19+ |
QFN |
502 |
全新 发货1-2天 |
|||
ST/意法 |
24+ |
QFN-14 |
47186 |
郑重承诺只做原装进口现货 |
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DdatasheetPDF页码索引
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