DIODE MODULE 100A/1200 to 1600V

DIODE MODULE 100A/1200 to 1600V FEATURES * Isolated Base * Dual Diodes Cathode Common and Cascaded Circuit * High Surge Capability * UL Recognized, File No. E187184 TYPICAL APPLICATIONS * Rectified For General Use

普通整流二极管模块

本公司利用丰富的封装技术生产制造模块产品，并投放到工业和车载市场。现在社会要求有效用电，在这一背景下，本公司致力于为通用逆变器、变频空调、太阳能发电系统及混合动力车提供功率模块产品。

100A Avg 12001600 Volts

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DIODE

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Darlington Power Transistors

Bipolar Power Transistors

POWER TRANSISTORS(50A,400-500V,250W)

SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE The MJ10015 and MJ10016 Darlington transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated sw

50 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 AND 500 VOLTS 250 WATTS

SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode The MJ10015 and MJ10016 Darlington transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated sw

NPN SILICON POWER DARLINGTON TRANSISTORS

SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode The MJ10015 and MJ10016 Darlington transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated sw

NPN Darlington Transistors

NPN Darlington Transistors TO-204MA (TO-3)