Triac Output Solid State Relay

FEATURES ● Solid Epoxy Body Resistant to the environment ● 4,000 Volt isolation between input and output ● Completely sealed, Immersion cleanable ● 3 to 32 Volt DC or 90 to Volt AC input ● 10 to 40 Amp Output ● 48 to 280, or 48 to 400 VAC Output ● Zero crossing or Random turn-on switching

Triac Output Solid State Relay

FEATURES ● Solid Epoxy Body Resistant to the environment ● 4,000 Volt isolation between input and output ● Completely sealed, Immersion cleanable ● 3 to 32 Volt DC or 90 to Volt AC input ● 10 to 40 Amp Output ● 48 to 280, or 48 to 400 VAC Output ● Zero crossing or Random turn-on switching

VHF power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the VHF frequency range. The transistor is encapsulated in a 4-lead, SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange. FEATURES • E

Three quadrant triacs high commutation

GENERAL DESCRIPTION Glass passivated high commutation triacs in a plastic envelope suitable for surface mounting, intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. These devices will commutate the full rated rms current at the maximum rated junction t

Silicon Controlled Rectifiers

Silicon Controlled Rectifiers Reverse Blocking Thyristors . . . designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. • Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity and Stability

Dual P-channel enhancement mode MOS transistor

DESCRIPTION Two P-channel enhancement mode MOS transistors in an 8-pin plastic SOT96-1 (SO8) package. FEATURES • High-speed switching • No secondary breakdown • Very low on-resistance. APPLICATIONS • Motor and actuator driver • Power management • Synchronized rectification.

SILICON TRIACS

SILICON TRIACS ● Sensitive Gate Triacs ● 8 A RMS, 70 A Peak ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 5 mA (Quadrant 1)