Diode – Power, Bare Die Gen VII, Fast Recovery 1200 V, 100 A

Features • Advanced Gen VII Technology • Fast and Soft Recovery • Maximum Junction Temperature 175°C • Low Forward Voltage: VF = 1.78 V (Typ.)  IF = 100 A • Easy to Parallel Operation Typical Applications • Solar • Energy storage • Industrial motor control

Power Diode Bare Die

Fast Diode Rectifier Bridge Power Module

Features • Ultra fast recovery times • Soft recovery characteristics • Very low stray inductance • High blocking voltage • High current • Low leakage current • Very low stray inductance - Symmetrical design - Lead frames for power connections • High level of integration Applicat

Diode Full Bridge Power Module

Features • Ultra fast recovery times • Soft recovery characteristics • High blocking voltage • High current • Low leakage current • Very low stray inductance - Symmetrical design - Lead frames for power connections • High level of integration Application • Uninterruptible Power

Full - Bridge Fast Trench Field Stop IGBT Power Module

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Full - Bridge Fast Trench Field Stop IGBT Power Module

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