DIP 4pin General Purpose Photocoupler

■ Description PC817XJ0000F Series contains an IRED optically coupled to a phototransistor. It is packaged in a 4pin DIP, available in wide-lead spacing option and SMT gullwing lead-form option. Input-output isolation voltage(rms) is 5.0kV. Collector-emitter voltage is 80V and CTR is 50 to 600 a

DIP 4pin General Purpose Photocoupler

■ Description PC817XJ0000F Series contains an IRED optically coupled to a phototransistor. It is packaged in a 4pin DIP, available in wide-lead spacing option and SMT gullwing lead-form option. Input-output isolation voltage(rms) is 5.0kV. Collector-emitter voltage is 80V and CTR is 50 to 600 a

PC817XxNiP0F Series Photocoupler

文件：523.26 Kbytes Page：14 Pages

Series Photocoupler

文件：523.26 Kbytes Page：14 Pages

DIP 4pin Photocoupler

文件：1.42466 Mbytes Page：14 Pages

封装/外壳：4-SMD，鸥翼 包装：卷带（TR） 描述：OPTOISOLATOR 5KV TRANS SMD 隔离器 光隔离器 - 晶体管，光电输出

Photocouplers

PC817XxNSZ0F Series DC Photocoupler

PC817XxNSZ0F Series DC Photocoupler

文件：952.15 Kbytes Page：13 Pages

DIP 4pin Photocoupler

文件：1.42466 Mbytes Page：14 Pages

封装/外壳：4-DIP（0.300"，7.62mm） 包装：卷带（TR） 描述：OPTOISOLATOR 5KV TRANS DIP 隔离器 光隔离器 - 晶体管，光电输出

Photocouplers

4-Pin DIP Phototransistor Optocouplers

Introduction or Description The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4−pin dual in−line package. The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon

4-Pin DIP Phototransistor Optocouplers

Introduction or Description The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4−pin dual in−line package. The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon

4-Pin DIP Phototransistor Optocouplers

文件：534.11 Kbytes Page：12 Pages

4-Pin DIP Phototransistor Optocouplers

文件：534.11 Kbytes Page：12 Pages