DIODE MODULE 100A/1200 to 1600V

DIODE MODULE 100A/1200 to 1600V FEATURES * Isolated Base * Dual Diodes Cathode Common and Cascaded Circuit * High Surge Capability * UL Recognized, File No. E187184 TYPICAL APPLICATIONS * Rectified For General Use

100A Avg 12001600 Volts

文件：157.68 Kbytes Page：2 Pages

DIODE MODULE 100A/1200 to 1600V

100A Avg 12001600 Volts

文件：157.68 Kbytes Page：2 Pages

POWER TRANSISTORS(10A,400V,175W)

The MJ10012 are high-voltage, high current Darlington transistors designed for automotive ignition, switching regulator and motor control applications.

10 AMPERE POWER TRANSISTORS DARLINGTON NPN SILICON 400 VOLTS 175 AND 118 WATTS

The MJ10012 and MJH10012 are high-voltage, high-current Darlington transistors designed for automotive ignition, switching regulator and motor control applications. • Collector-Emitter Sustaining Voltage — VcEO(sus) = 400 Vdc (Min) • 175 Watts Capability at 50 Volts • Automotive Functional Test

POWER TRANSISTORS DARLINGTON NPN SILICON

NPN Silicon Power Darlington Transistor TheMJ10012 and MJH10012 are high–voltage, high–current Darlington transistors designed for automotive ignition, switching regulator and motor control applications. • Collector–Emitter Sustaining Voltage — VCEO(sus)= 400 Vdc (Min) • 175

NPN SILICON POWER DARLINGTON TRANSISTORS

The MJ10012 are high-voltage, high current Darlington transistors designed for automotive ignition, switching regulator and motor control applications.

POWER TRANSISTORS DARLINGTON NPN SILICON

NPN Silicon Power Darlington Transistor TheMJ10012 and MJH10012 are high–voltage, high–current Darlington transistors designed for automotive ignition, switching regulator and motor control applications. • Collector–Emitter Sustaining Voltage — VCEO(sus)= 400 Vdc (Min) • 175