100 V, 1 A PNP low VCEsat (BISS) transistor

100 V, 1 A PNP low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

Low VCEsat (BISS) transistors

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100 V, 1 A PNP low VCEsat (BISS) transistor

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 100V 1A SOT223 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

100 V, 1 A PNP low VCEsat (BISS) transistor

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100 V, 1 A PNP low VCEsat (BISS) transistor

SHIELDED ADJUSTABLE RF COILS

[J.W.MILLER]

ROUND INSTRUMENTATION HANDLES

[KEYSTONE] ROUND INSTRUMENTATION HANDLES FERRULES HANDLE MOUNTING SCREWS

MEASURING WHEEL

Features • Variety of materials and surface types • Accepts standard 10 mm shaft secured with a set screw • 200mm circumference accurate to +/- 0.1% • Operates from -30° to 80° C

Multi-Range 60 V DC Power Supplies

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Releasable Type T Rivets

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