丝印代码：100010；60 V, 1.7 A PNP low VCEsat (BISS) transistor

1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN complement: PBSS4260QA. 2. Features and benefits • Very low collector-

60 V, 1.7 A PNP low VCEsat (BISS) transistor

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.\n NPN complement: PBSS4260QA. • Very low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain hFE at high IC\n• High energy efficiency due to less heat generation\n• Reduced Printed-Circuit Board (PCB) area requirements\n• Solderable side pads\n• AEC-Q101 qual;

60 V, 1.7 A PNP low VCEsat (BISS) transistor

60 V, 1.7 A PNP low VCEsat (BISS) transistor

封装/外壳：3-XDFN 裸露焊盘 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 60V 1.7A DFN1010D-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

80-DOT COMMON/SEGMENT DRIVER

GENERAL DESCRIPTION The MSM5260 is a dot matrix common/segment LCD driver LSI which is fabricated using low power CMOS metal gate technology. This LSI consists of 80-bit shift register, 80-bit latch, 80-bit level shifter and 80-bit 4-level driver. It converts display data, which is serially rece

Voltage regulator diodes

Low-power voltage regulator diodes in small hermetically sealed glass SOD80C SMD packages. The series consists of 43 types with nominal working voltages from 3.0 to 75 V. FEATURES • Total power dissipation : max. 500 mW • Tolerance series:±5 • Working voltage range : nom. 3.0 to 75 V

SILICON PLANAR ZENER DIODES, 500mW,MINIMELF PACKAGE

SILICON PLANAR ZENER DIODES, 500mW, MINIMELF PACKAGE

Silicon Z-Diodes

Features ● Very sharp reverse characteristic ● Very high stability ● Electrical data identical with the devices 1N5221B 1N5267B ● Low reverse current level ● VZ–tolerance ± 5 Applications    Voltage stabilization

Silicon Epitaxial Planar Z-Diodes

Features ● Very sharp reverse characteristic ● Low reverse current level ● Available with tighter tolerances ● Very high stability ● Low noise Applications    Voltage stabilization