40 V low VCEsat PNP transistor

40 V low VCEsat PNP transistor

DESCRIPTION PNP transistor providing low VCEsat and high current capability in a SOT666 plastic package. NPN complement: PBSS4240V. FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain (hFE) at high IC • High

丝印代码：52；40 V low VCEsat PNP transistor

1. General description PNP transistor providing low VCEsat and high current capability in a SOT666 ultra small Surface- Mounted Device (SMD) plastic package. NPN complement: PBSS4240V 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capabi

40 V low VCEsat PNP transistor

PNP transistor providing low VCEsat and high current capability in a SOT666 plastic package. NPN complement: PBSS4240V. • Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain (hFE ) at high IC\n• High efficiency leading to reduced heat generation\n• Reduced printed-circuit board area requirements.\n• AEC-Q101 qualified;

封装/外壳：SOT-563，SOT-666 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 40V 1.8A SOT666 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

40 V low VCEsat PNP transistor

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PNP Transistors

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Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini power type package (2-pin) • Allowing automatic mounting with the emboss taping • Sharp rising performance

SURFACE MOUNT SILICON ZENER DIODES

VOLTAGE 2.4 to 51 Volts POWER 410 mWatts FEATURES • Planar Die construction • 410mW Power Dissipation • Zener Voltages from 2.4V~51V • Ideally Suited for Automated Assembly Processes • In compliance with EU RoHS 2002/95/EC directives

SURFACE MOUNT SILICON ZENER DIODES

VOLTAGE 2.4 to 51 Volts POWER 200 mWatts FEATURES • Planar Die construction • 200mW Power Dissipation • Zener Voltages from 2.4V~51V • Ideally Suited for Automated Assembly Processes • In compliance with EU RoHS 2002/95/EC directives

SURFACE MOUNT SILICON ZENER DIODES

SURFACE MOUNT SILICON ZENER DIODES VOLTAGE 2.4 to 75 Volts POWER 200 mWatts FEATURES • Planar Die construction • 200mW Power Dissipation • Ideally Suited for Automated Assembly Processes • Pb free product : 99 Sn above can meet RoHS environment substance diective request

50 Watt Zener Diodes 짹5 Tolerance

Features: ● Zener Voltage 3.9 to 200V ● Low Zener Impedance ● Highly Reliable and Rugged ● Also Available in Reverse Polarity (NTE5240AK thru NTE5296AK)