40 V low VCEsat PNP transistor

40 V low VCEsat PNP transistor

DESCRIPTION PNP transistor providing low VCEsat and high current capability in a SOT666 plastic package. NPN complement: PBSS4240V. FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain (hFE) at high IC • High

40 V low VCEsat PNP transistor

1. General description PNP transistor providing low VCEsat and high current capability in a SOT666 ultra small Surface- Mounted Device (SMD) plastic package. NPN complement: PBSS4240V 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capabi

40 V low VCEsat PNP transistor

封装/外壳：SOT-563，SOT-666 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 40V 1.8A SOT666 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

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