30 V, 2 A PNP low VCEsat (BISS) transistor

DESCRIPTION PNP BISS transistor in a SOT23 plastic package offering ultra low VCEsat and RCEsat parameters. FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • Higher efficiency leading to less heat generation • Reduced printed-circuit

20V, 2A PNP low VCEsat (BISS) transistor

DESCRIPTION PNP BISS transistor in a SOT23 plastic package offering ultra low VCEsat and RCEsat parameters. FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • Higher efficiency leading to less heat generation • Reduced printed-circuit

PNP General Pu rpose Amplifier

Features ●Low collector-emitter saturation voltage ●High current capability ●Epoxy meets UL-94 V-0 flammability rating ●Halogen free available upon request by adding suffix ”HF” ●Moisure Sensitivity Level 1 ●Marking:W3G Applications ●Supply line switching circuits ●Battery management ●DC

PNP General Pu rpose Amplifier

Features ●Low collector-emitter saturation voltage ●High current capability ●Epoxy meets UL-94 V-0 flammability rating ●Halogen free available upon request by adding suffix ”HF” ●Moisure Sensitivity Level 1 ●Marking:W3G Applications ●Supply line switching circuits ●Battery management ●DC

丝印代码：3G；30 V, 2 A PNP low VCEsat (BISS) transistor

Features and benefits * Low collector-emiter saturation voltage VCEsat * High collector current capability: IC and ICM * Higher efficiency leading to less heat generation * AEC-Q101 qualified

20 V, 2 A PNP low VCEsat (BISS) transistor

FEATURES •Low collector-emitter saturation voltage VCEsat •High collector current capability: IC and ICM •Higher efficiency leading to less heat generation •Reduced printed-circuit board requirements •Cost effective alternative to MOSFETs in specific applications. APPLICATIONS •Power manage

30 V, 2 A PNP low VCEsat (BISS) transistor

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4230T. • Low collector-emiter saturation voltage VCEsat\n• High collector current capability: IC and ICM\n• Higher efficiency leading to less heat generation\n• AEC-Q101 qualified;

Low VCEsat (BISS) transistors

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封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 30V 2A TO236AB 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

30 V, 2 A PNP low VCEsat (BISS) transistor

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VARIABLE OUTPUT VOLTAGE REGULATOR(DUAL TRACKING TYPE)

DESCRIPTION The M5230 is a semiconductor integrated circuit which is designed for variable output voltage regulator of dual tracking type. APPLICATION Dual voltage power supplies for stereo preamplifiers, for the power supplies of other equipment, including operational amplifiers.

VARIABLE OUTPUT VOLTAGE REGULATOR(DUAL TRACKING TYPE)

DESCRIPTION The M5230 is a semiconductor integrated circuit which is designed for variable output voltage regulator of dual tracking type. APPLICATION Dual voltage power supplies for stereo preamplifiers, for the power supplies of other equipment, including operational amplifiers.

SURFACE MOUNT SILICON ZENER DIODES

VOLTAGE 2.4 to 51 Volts POWER 410 mWatts FEATURES • Planar Die construction • 410mW Power Dissipation • Zener Voltages from 2.4V~51V • Ideally Suited for Automated Assembly Processes • In compliance with EU RoHS 2002/95/EC directives

SURFACE MOUNT SILICON ZENER DIODES

VOLTAGE 2.4 to 51 Volts POWER 200 mWatts FEATURES • Planar Die construction • 200mW Power Dissipation • Zener Voltages from 2.4V~51V • Ideally Suited for Automated Assembly Processes • In compliance with EU RoHS 2002/95/EC directives

Dual Bias Resistor Transistors

Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital