30 V, 2 A PNP low VCEsat (BISS) transistor

DESCRIPTION PNP BISS transistor in a SOT23 plastic package offering ultra low VCEsat and RCEsat parameters. FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • Higher efficiency leading to less heat generation • Reduced printed-circuit

20V, 2A PNP low VCEsat (BISS) transistor

DESCRIPTION PNP BISS transistor in a SOT23 plastic package offering ultra low VCEsat and RCEsat parameters. FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • Higher efficiency leading to less heat generation • Reduced printed-circuit

PNP General Pu rpose Amplifier

Features ●Low collector-emitter saturation voltage ●High current capability ●Epoxy meets UL-94 V-0 flammability rating ●Halogen free available upon request by adding suffix ”HF” ●Moisure Sensitivity Level 1 ●Marking:W3G Applications ●Supply line switching circuits ●Battery management ●DC

30 V, 2 A PNP low VCEsat (BISS) transistor

Features and benefits * Low collector-emiter saturation voltage VCEsat * High collector current capability: IC and ICM * Higher efficiency leading to less heat generation * AEC-Q101 qualified

30 V, 2 A PNP low VCEsat (BISS) transistor

Low VCEsat (BISS) transistors

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封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 30V 2A TO236AB 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

30 V, 2 A PNP low VCEsat (BISS) transistor

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