丝印代码：000010；30 V, 2 A PNP low VCEsat (BISS) transistor

1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN complement: PBSS4230QA. 2. Features and benefits • Very low collector-

30 V, 2 A PNP low VCEsat (BISS) transistor

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.\n NPN complement: PBSS4230QA. • Very low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain hFE at high IC\n• High energy efficiency due to less heat generation\n• Reduced Printed-Circuit Board (PCB) area requirements\n• Solderable side pads\n• AEC-Q101 qual;

30 V, 2 A PNP low VCEsat (BISS) transistor

30 V, 2 A PNP low VCEsat (BISS) transistor

封装/外壳：3-XDFN 裸露焊盘 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 30V 2A DFN1010D-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

VARIABLE OUTPUT VOLTAGE REGULATOR(DUAL TRACKING TYPE)

DESCRIPTION The M5230 is a semiconductor integrated circuit which is designed for variable output voltage regulator of dual tracking type. APPLICATION Dual voltage power supplies for stereo preamplifiers, for the power supplies of other equipment, including operational amplifiers.

VARIABLE OUTPUT VOLTAGE REGULATOR(DUAL TRACKING TYPE)

DESCRIPTION The M5230 is a semiconductor integrated circuit which is designed for variable output voltage regulator of dual tracking type. APPLICATION Dual voltage power supplies for stereo preamplifiers, for the power supplies of other equipment, including operational amplifiers.

SURFACE MOUNT SILICON ZENER DIODES

VOLTAGE 2.4 to 51 Volts POWER 410 mWatts FEATURES • Planar Die construction • 410mW Power Dissipation • Zener Voltages from 2.4V~51V • Ideally Suited for Automated Assembly Processes • In compliance with EU RoHS 2002/95/EC directives

SURFACE MOUNT SILICON ZENER DIODES

VOLTAGE 2.4 to 51 Volts POWER 200 mWatts FEATURES • Planar Die construction • 200mW Power Dissipation • Zener Voltages from 2.4V~51V • Ideally Suited for Automated Assembly Processes • In compliance with EU RoHS 2002/95/EC directives

Dual Bias Resistor Transistors

Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital