丝印代码：2H；30 V, 2 A PNP/PNP low VCEsat (BISS) transistor

1. General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4230PANP. NPN/NPN complement: PBSS4230PAN. 2. Features and benefits • Very low collec

30 V, 2 A PNP/PNP low VCEsat (BISS) transistor

PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.\n NPN/PNP complement: PBSS4230PANP. NPN/NPN complement: PBSS4230PAN. • Very low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain hFE at high IC\n• Reduced Printed-Circuit Board (PCB) requirements\n• High energy efficiency due to less heat generation\n• AEC-Q101 qualified;

30 V, 2 A PNP/PNP low VCEsat (BISS) transistor

30 V, 2 A PNP/PNP low VCEsat (BISS) transistor

30 V, 2 A PNP/PNP low VCEsat double transistor

Features and benefits • Very low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain hFE at high IC • Reduced Printed-Circuit Board (PCB) requirements • High energy efficiency due to less heat generation • Qualified accordi

30 V, 2 A PNP/PNP low VCEsat double transistor

VARIABLE OUTPUT VOLTAGE REGULATOR(DUAL TRACKING TYPE)

DESCRIPTION The M5230 is a semiconductor integrated circuit which is designed for variable output voltage regulator of dual tracking type. APPLICATION Dual voltage power supplies for stereo preamplifiers, for the power supplies of other equipment, including operational amplifiers.

VARIABLE OUTPUT VOLTAGE REGULATOR(DUAL TRACKING TYPE)

DESCRIPTION The M5230 is a semiconductor integrated circuit which is designed for variable output voltage regulator of dual tracking type. APPLICATION Dual voltage power supplies for stereo preamplifiers, for the power supplies of other equipment, including operational amplifiers.

SURFACE MOUNT SILICON ZENER DIODES

VOLTAGE 2.4 to 51 Volts POWER 410 mWatts FEATURES • Planar Die construction • 410mW Power Dissipation • Zener Voltages from 2.4V~51V • Ideally Suited for Automated Assembly Processes • In compliance with EU RoHS 2002/95/EC directives

SURFACE MOUNT SILICON ZENER DIODES

VOLTAGE 2.4 to 51 Volts POWER 200 mWatts FEATURES • Planar Die construction • 200mW Power Dissipation • Zener Voltages from 2.4V~51V • Ideally Suited for Automated Assembly Processes • In compliance with EU RoHS 2002/95/EC directives

Dual Bias Resistor Transistors

Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital