40 V NPN low VCEsat (BISS) transistor

Features * Ultra low collector-emitter saturation voltage VCEsat * 4 A continuous collector current capability IC (DC) * Up to 15 A peak current * Very low collector-emitter saturation resistance * High efficiency due to less heat generation

Low VCEsat (BISS) transistors

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40 V NPN low VCEsat (BISS) transistor

40 V NPN low VCEsat transistor

1. General description NPN low VCEsat transistor in a SOT457 (SC-74) SMD plastic package. PNP complement: PBSS5440D-Q 2. Features and benefits • Ultra low collector-emitter saturation voltage VCEsat • 4 A continuous collector current capability IC (DC) • Up to 15 A peak current • Very low

封装/外壳：SC-74，SOT-457 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 40V 4A 6TSOP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

40 V NPN low VCEsat (BISS) transistor

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40 V NPN low VCEsat transistor

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