30 V, 3 A NPN low VCEsat (BISS) transistor

DESCRIPTION NPN low VCEsat transistor in a SOT89 plastic package. FEATURES • SOT89 (SC-62) package • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • Higher efficiency leading to less heat generation • Reduced printed-circuit board requiremen

NPN low VCEsat (BISS) transistor

FEATURES •SOT89 (SC-62) package •Low collector-emitter saturation voltage VCEsat •High collector current capability: IC and ICM •Higher efficiency leading to less heat generation •Reduced printed-circuit board requirements. APPLICATIONS •Power management –DC/DC converters –Supply line s

Low VCEsat (BISS) transistors

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NPN low VCEsat (BISS) transistor 30 V, 3 A

30 V, 3 A NPN low VCEsat (BISS) transistor

封装/外壳：TO-243AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 30V 3A SOT89 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-243AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 30V 3A SOT89 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN low VCEsat (BISS) transistor 30 V, 3 A

文件：194.03 Kbytes Page：12 Pages

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