20 V NPN low VCEsat transistor

DESCRIPTION NPN low VCEsat transistor in a SOT23 plastic package. PNP complement: PBSS5320T. FEATURES • Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat • High collector current capability • High collector current gain • Improved efficiency due to reduced hea

20 V NPN low VCEsat transistor

Silicon NPN transistor in a SOT-23 Plastic Package

Descriptions Silicon NPN transistor in a SOT-23 Plastic Package. Features Low VCE(sat), high current. Applications General purpose switching and muting, LCD back-lighting, supply line switching circuits.

20 V NPN low VCEsat transistor

FEATURES •Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat •High collector current capability •High collector current gain •Improved efficiency due to reduced heat generation. APPLICATIONS •Power management applications •Low and medium power DC/DC convertors •

双极晶体管

20 V NPN low VCEsat transistor

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 20V 2A TO236AB 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

20 V NPN low VCEsat transistor

文件：369.04 Kbytes Page：10 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 20V 2A TO236AB 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

4700

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