位置:首页 > IC中文资料 > PBSS4260QA

型号 功能描述 生产厂家 企业 LOGO 操作
PBSS4260QA

丝印代码:111100;60 V, 2 A NPN low VCEsat (BISS) transistor

1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP complement: PBSS5260QA. 2. Features and benefits • Very low collector-

NEXPERIA

安世

PBSS4260QA

60 V, 2 A NPN low VCEsat (BISS) transistor

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.\n PNP complement: PBSS5260QA. • Very low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain hFE at high IC\n• High energy efficiency due to less heat generation\n• Reduced Printed-Circuit Board (PCB) area requirements\n• Solderable side pads\n• AEC-Q101 qual;

NEXPERIA

安世

PBSS4260QA

60 V, 2 A NPN low VCEsat (BISS) transistor

ETC

知名厂家

封装/外壳:3-XDFN 裸露焊盘 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 60V 2A DFN1010D-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ETC

知名厂家

9.6mm Discrete HFET

9.6mm Discrete HFET ● 9600 m x 0.5 m ● Nominal Pout of 37 -dBm at 6.0 GHz ● Nominal Gain of 9.5 -dB at 6.0 GHz ● Nominal PAE of 52 at 6.0 GHz ● Suitable for high reliability applications ● 0,572 x 2,324 x 0,102 mm (0.023 x 0.092 x 0.004 in.)

TRIQUINT

9.6mm Discrete HFET

9.6mm Discrete HFET ● 9600 m x 0.5 m ● Nominal Pout of 37 -dBm at 6.0 GHz ● Nominal Gain of 9.5 -dB at 6.0 GHz ● Nominal PAE of 52 at 6.0 GHz ● Suitable for high reliability applications ● 0,572 x 2,324 x 0,102 mm (0.023 x 0.092 x 0.004 in.)

TRIQUINT

5-V Low-Drop Voltage Regulator

Features • Low-drop voltage • Very low quiescent current • Low starting current consumption • Integrated temperature protection • Protection against reverse polarity • Input voltage up to 42 V • Overvoltage protection up to 65 V (≤ 400 ms) • Short-circuit proof • Suited for automotive ele

SIEMENS

西门子

NMOS 4-BIT MICROCONTROLLER

NMOS 4-BIT MICROCONTROLLER

TOSHIBA

东芝

POW-R-BLOK Dual SCR/Diode Isolated Module 60 Amperes / Up to 1600 Volts

文件:106.05 Kbytes Page:4 Pages

POWEREX

PBSS4260QA产品属性

  • 类型

    描述

  • Package name:

    DFN1010D-3

  • Size (mm):

    1.1 x 1 x 0.37

  • Polarity:

    NPN

  • Ptot (mW):

    325

  • VCEO [max] (V):

    60

  • IC [max] (mA):

    2000

  • hFE [min]:

    235

  • Tj [max] (°C):

    150

  • fT [min] (MHz):

    120

  • Automotive qualified:

    Y

更新时间:2026-5-15 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Nexperia(安世)
24+
SOT-1215
4432
原厂订货渠道,支持BOM配单一站式服务
Nexperia
25+
DFN1010-3
21000
正规渠道,免费送样。支持账期,BOM一站式配齐
NEXPERIA/安世
25+
SOT1215
600000
NEXPERIA/安世全新特价PBSS4260QAZ即刻询购立享优惠#长期有排单订
恩XP
25+
NA
30000
房间原装现货特价热卖,有单详谈
恩XP
1551+
DFN1010D-3
1000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
恩XP
22+
N/A
390000
现货,原厂原装假一罚十!
Nexperia
26+
Modules
100000
现货~进口原装|遥遥领先
恩XP
2450+
DFN1010D-3
9850
只做原装正品假一赔十为客户做到零风险!!
Nexperia(安世)
2447
SOT-1215
115000
5000个/圆盘一级代理专营品牌!原装正品,优势现货,
恩XP
原厂封装
9800
原装进口公司现货假一赔百

PBSS4260QA数据表相关新闻