丝印代码：2N；60 V, 2 A NPN/NPN low VCEsat (BISS) transistor

1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4260PANP. PNP/PNP complement: PBSS5260PAP. 2. Features and benefits • Very low collec

60 V, 2 A NPN/NPN low VCEsat (BISS) transistor

NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.\n NPN/PNP complement: PBSS4260PANP. PNP/PNP complement: PBSS5260PAP. • Very low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain hFE at high IC\n• Reduced Printed-Circuit Board (PCB) requirements\n• High efficiency due to less heat generation\n• AEC-Q101 qualified;

60 V, 2 A NPN/NPN low VCEsat (BISS) transistor

60 V, 2 A NPN/NPN low VCEsat (BISS) transistor

丝印代码：2Q；60 V, 2 A NPN/PNP low VCEsat (BISS) transistor

1. General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PBSS4260PAN. PNP/PNP complement: PBSS5260PAP. 2. Features and benefits • Very low collect

60 V, 2 A NPN/PNP low VCEsat transistor

NPN/PNP low VCEsat transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.\n NPN/NPN complement: PBSS4260PAN-Q\n PNP/PNP complement: PBSS5260PAP-Q

60 V, 2 A NPN/PNP low VCEsat (BISS) transistor

丝印代码：3D；60 V, 2 A NPN/PNP low VCEsat (BISS) double transistor

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丝印代码：3L；60 V, 2 A NPN/NPN low VCEsat (BISS) double transistor

文件：741.3 Kbytes Page：17 Pages

9.6mm Discrete HFET

9.6mm Discrete HFET ● 9600 m x 0.5 m ● Nominal Pout of 37 -dBm at 6.0 GHz ● Nominal Gain of 9.5 -dB at 6.0 GHz ● Nominal PAE of 52 at 6.0 GHz ● Suitable for high reliability applications ● 0,572 x 2,324 x 0,102 mm (0.023 x 0.092 x 0.004 in.)

9.6mm Discrete HFET

9.6mm Discrete HFET ● 9600 m x 0.5 m ● Nominal Pout of 37 -dBm at 6.0 GHz ● Nominal Gain of 9.5 -dB at 6.0 GHz ● Nominal PAE of 52 at 6.0 GHz ● Suitable for high reliability applications ● 0,572 x 2,324 x 0,102 mm (0.023 x 0.092 x 0.004 in.)

5-V Low-Drop Voltage Regulator

Features • Low-drop voltage • Very low quiescent current • Low starting current consumption • Integrated temperature protection • Protection against reverse polarity • Input voltage up to 42 V • Overvoltage protection up to 65 V (≤ 400 ms) • Short-circuit proof • Suited for automotive ele

NMOS 4-BIT MICROCONTROLLER

NMOS 4-BIT MICROCONTROLLER

POW-R-BLOK Dual SCR/Diode Isolated Module 60 Amperes / Up to 1600 Volts

文件：106.05 Kbytes Page：4 Pages