NPN low VCEsat (BISS) transistor

DESCRIPTION NPN BISS transistor in a SOT23 plastic package providing ultra low VCEsat and RCEsat parameters. PNP complement: PBSS5230T. FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency leading to less heat generation

丝印代码：3D；30 V, 2 A NPN low VCEsat (BISS) transistor

FEATURES •Low collector-emitter saturation voltage VCEsat •High collector current capability IC and ICM •High efficiency leading to less heat generation •Reduced printed-circuit board requirements •Cost effective alternative to MOSFETs in specific applications. APPLICATIONS •Power managem

Low VCEsat (BISS) transistors

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30 V; 2 A NPN low VCEsat (BISS) transistor

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 30V 2A TO236AB 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN low VCEsat (BISS) transistor

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Dual, High Speed, 2.5V to 12V, Rail-to-Rail Amplifier

Description The FAN4230 is a dual, low cost, high performance, voltage feedback amplifier that consumes only 2.5mA of supply current while providing ±130mA of output short circuit current. The FAN4230 is designed to operate from 2.5V to 12V (±6V) supplies. The common mode voltage range extends

High-Performance T-13/4 (5 mm) TS AlGaAs Infrared (875 nm) Lamp

Description The HSDL-4200 series of emitters are the first in a sequence of emitters that are aimed at high power, low forward voltage, and high speed. These emitters utilize the Transparent Substrate, double heterojunction, Aluminum Gallium Arsenide (TS AlGaAs) LED technology. These devices are

1.2mm Discrete HFET

DESCRIPTION The Triquint TGF4230 - EEU is a single gate 1.2 mm Discrete GaAs Heterostructure Field Effect Transistor (HFET) designed for high- efficiency power applications up to 1 2- GHz in Class A and Class AB operation. Bond- pad and backside metalization is gold plated for compatibility with

Silicon Power Rectifier

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Silicon Power Rectifier

文件：120.31 Kbytes Page：3 Pages