丝印代码：011100；30 V, 2 A NPN low VCEsat (BISS) transistor

1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP complement: PBSS5230QA. 2. Features and benefits • Very low collector-

30 V, 2 A NPN low VCEsat (BISS) transistor

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.\n PNP complement: PBSS5230QA. • Very low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain hFE at high IC\n• High energy efficiency due to less heat generation\n• Reduced Printed-Circuit Board (PCB) area requirements\n• Solderable side pads\n• AEC-Q101 qual;

30 V, 2 A NPN low VCEsat (BISS) transistor

30 V, 2 A NPN low VCEsat (BISS) transistor

30 V, 2 A NPN low VCEsat transistor

NPN low VCEsat transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.\n PNP complement: PBSS5230QA-Q

封装/外壳：3-XDFN 裸露焊盘 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 30V 2A DFN1010D-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Dual, High Speed, 2.5V to 12V, Rail-to-Rail Amplifier

Description The FAN4230 is a dual, low cost, high performance, voltage feedback amplifier that consumes only 2.5mA of supply current while providing ±130mA of output short circuit current. The FAN4230 is designed to operate from 2.5V to 12V (±6V) supplies. The common mode voltage range extends

High-Performance T-13/4 (5 mm) TS AlGaAs Infrared (875 nm) Lamp

Description The HSDL-4200 series of emitters are the first in a sequence of emitters that are aimed at high power, low forward voltage, and high speed. These emitters utilize the Transparent Substrate, double heterojunction, Aluminum Gallium Arsenide (TS AlGaAs) LED technology. These devices are

1.2mm Discrete HFET

DESCRIPTION The Triquint TGF4230 - EEU is a single gate 1.2 mm Discrete GaAs Heterostructure Field Effect Transistor (HFET) designed for high- efficiency power applications up to 1 2- GHz in Class A and Class AB operation. Bond- pad and backside metalization is gold plated for compatibility with

Silicon Power Rectifier

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Silicon Power Rectifier

文件：120.31 Kbytes Page：3 Pages