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PBSS4230PAN价格
参考价格：￥1.1497
型号：PBSS4230PAN,115 品牌：NXP 备注：这里有PBSS4230PAN多少钱，2026年最近7天走势，今日出价，今日竞价，PBSS4230PAN批发/采购报价，PBSS4230PAN行情走势销售排行榜，PBSS4230PAN报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
PBSS4230PAN | 丝印代码：2G；30 V, 2 A NPN/NPN low VCEsat (BISS) transistor 1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4230PANP. PNP/PNP complement: PBSS5230PAP. 2. Features and benefits • Very low collec | NEXPERIA 安世 |   | |
PBSS4230PAN | 30 V, 2 A NPN/NPN low VCEsat (BISS) transistor | ETC 知名厂家 | ETC | |
PBSS4230PAN | 30 V, 2 A NPN/NPN low VCEsat (BISS) transistor | ETC 知名厂家 | ETC | |
PBSS4230PAN | 30 V, 2 A NPN/NPN low VCEsat (BISS) transistor | NEXPERIA 安世 | | |
丝印代码：2J；30 V, 2 A NPN/PNP low VCEsat (BISS) transistor 1. General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PBSS4230PAN. PNP/PNP complement: PBSS5230PAP. 2. Features and benefits • Very low collect | NEXPERIA 安世 | | ||
30 V, 2 A NPN/PNP low VCEsat (BISS) transistor | ETC 知名厂家 | ETC | | |
30 V, 2 A NPN/NPN low VCEsat transistor | NEXPERIA 安世 | | ||
Dual, High Speed, 2.5V to 12V, Rail-to-Rail Amplifier Description The FAN4230 is a dual, low cost, high performance, voltage feedback amplifier that consumes only 2.5mA of supply current while providing ±130mA of output short circuit current. The FAN4230 is designed to operate from 2.5V to 12V (±6V) supplies. The common mode voltage range extends | FAIRCHILD 仙童半导体 | | ||
High-Performance T-13/4 (5 mm) TS AlGaAs Infrared (875 nm) Lamp Description The HSDL-4200 series of emitters are the first in a sequence of emitters that are aimed at high power, low forward voltage, and high speed. These emitters utilize the Transparent Substrate, double heterojunction, Aluminum Gallium Arsenide (TS AlGaAs) LED technology. These devices are | HP 安捷伦 | | ||
1.2mm Discrete HFET DESCRIPTION The Triquint TGF4230 - EEU is a single gate 1.2 mm Discrete GaAs Heterostructure Field Effect Transistor (HFET) designed for high- efficiency power applications up to 1 2- GHz in Class A and Class AB operation. Bond- pad and backside metalization is gold plated for compatibility with | TRIQUINT | | ||
Silicon Power Rectifier 文件：120.31 Kbytes Page：3 Pages | MICROSEMI 美高森美 | | ||
Silicon Power Rectifier 文件：120.31 Kbytes Page：3 Pages | MICROSEMI 美高森美 | |
PBSS4230PAN产品属性
- 类型
描述
- 型号
PBSS4230PAN
- 功能描述
两极晶体管 - BJT 30V 2A NPN/PNP lo VCEsat transistor
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEXPERIA/安世 |
25+ |
SOT1118 |
600000 |
NEXPERIA/安世全新特价PBSS4230PAN即刻询购立享优惠#长期有排单订 |
|||
NEXPERIA/安世 |
2026+ |
原厂原封可拆样 |
65258 |
百分百原装现货,实单必成 |
|||
Nexperia |
25+ |
SOT-1118 |
21000 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
SOT1118 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
恩XP |
1536+ |
DFN2020-6 |
500 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
恩XP |
25+ |
NA |
30000 |
房间原装现货特价热卖,有单详谈 |
|||
恩XP |
2450+ |
DFN2020-6 |
9850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
NEXPERIA/安世 |
2022+ |
3000 |
6600 |
只做原装,假一罚十,长期供货。 |
|||
NEXPERIA/安世 |
23+ |
SOT1118 |
6000 |
原装正品假一罚百!可开增票! |
|||
恩XP |
23+ |
NA |
21000 |
电子元器件供应原装现货. 优质独立分销。原厂核心渠道 |
PBSS4230PAN规格书下载地址
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