20 V, 2 A NPN low VCEsat (BISS) transistor

General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT666 Surface Mounted Device (SMD) plastic package. PNP complement: PBSS5220V. Features ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability: IC and ICM ■ High collector c

20 V, 2 A NPN low VCEsat (BISS) transistor

20 V, 2 A NPN low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability: IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

PBSS4220V - 20 V, 2 A NPN low VCEsat (BISS) transistor

封装/外壳：SOT-563，SOT-666 包装：散装 描述：TRANS NPN 20V 2A SOT666 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

20 V, 2 A NPN low VCEsat (BISS) transistor

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SPDT UltraCMOS??RF Switch DC - 2500 MHz

Product Description The PE4220 UltraCMOS™ RF Switch is designed to cover a broad range of applications from near DC to 2500 MHz. This single-supply switch integrates on-board CMOS control logic driven by a simple, single-pin CMOS or TTL compatible control input. Features • Single 3-volt power

K - Outdoor keyed

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T - Small Outdoor keyed

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B - Indoor keyed

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B - Indoor keyed

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