丝印代码：6F；60 V, 6.2 A NPN low VCEsat (BISS) transistor

Technical summary NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4041PX. Features and benefits • Very low collector-emitter saturation voltage VCEsat • High collector

60 V, 6.2 A NPN low VCEsat (BISS) transistor

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.\n PNP complement: PBSS4041PX. • Very low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain (hFE) at high IC\n• High energy efficiency due to less heat generation\n• AEC-Q101 qualified\n• Smaller required Printed-Circuit Board (PCB) area than for conventiona;

60 V, 6.2 A NPN low VCEsat transistor

NPN low VCEsat transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.\n PNP complement: PBSS4041PX

封装/外壳：TO-243AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 60V 6.2A SOT89 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

60 V, 6.2 A NPN low VCEsat (BISS) transistor

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Quadruple true/complement buffer

DESCRIPTION The HEF4041B is a quadruple true/complement buffer which provides both an inverted active LOW output (O) and a non-inverted active HIGH output (O) for each input (I). The buffers exhibit high current output capability suitable for driving TTL or high capacitive loads. APPLICATION IN

Precision Micropower Shunt Voltage Reference

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Self-Calibrating 12-Bit Plus Sign Serial I/O A/D Converters with MUX and Sample/Hold

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Precision Micropower Shunt Voltage Reference

文件：277.24 Kbytes Page：19 Pages

Precision Micropower Shunt Voltage Reference

文件：277.24 Kbytes Page：19 Pages