80 V, 4.5 A PNP low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

80 V, 4.5 A PNP low VCEsat (BISS) transistor

General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS305NZ. Features ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability IC and ICM ■ Hig

80 V, 4.5 A PNP low V_CEsat (BISS) transistor

80 V, 4.5 A PNP low VCEsat transistor

1. General description PNP low VCEsat transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS305NZ-Q 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector c

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 80V 4.5A SOT223 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

80 V, 4.5 A PNP low VCEsat transistor

Card Edge Connectors 0.156” (3.96mm) Pitch

Features: • 0.156” (3.96mm) contact spacing x 0.140” (3.56mm) row spacing • Accepts 0.062” (1.57mm) nominal thickness P.C. board • Low profile insulator body, 0.470” (11.94mm) • Contact termination options include P.C. tail, wire hole, extender board bends • Dual row configuration • Large va

Precision Vise Combinations

Model 201 Features: > The easy-to-use single knob controls head movement through 3-planes: 210° Tilt, 360° Turn & 360° Rotation > Fine/coarse adjusting knob controls jaw pressure for delicate work > Grooved jaws are excellent for holding small objects and are made of reinforced thermal compos

305 Series Can Tumblers

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PICO 305 Series Fuses - 277V UL913 Intrinsically Safe Fuse

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