丝印代码：C4；15 V PNP BISS loadswitch

Features * Low VCEsat (BISS) and resistor-equipped transistor in one package * Low ‘threshold’ voltage (

15 V PNP BISS loadswitch

Low VCEsat PNP transistor and NPN resistor-equipped transistor in one package. • Low VCEsat (BISS) and resistor-equipped transistor in one package\n• Low drive power required\n• Reduction of component count\n• AEC-Q101 qualified;

15 V PNP BISS loadswitch

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15 V PNP BISS loadswitch

15 V 500 mA PNP/NPN loadswitch double transistor

Low VCEsat PNP transistor and NPN Resistor- Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. • Low VCEsat and resistor-equipped transistor in one package\n• Low threshold voltage (<1 V) compared to MOSFET\n• Low drive power required\n• Space-saving solution\n• Reduction of component count\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 1000 Volts CURRENT - 15 Amperes)

VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes FEATURES ● Electrically Isolated Metal Case for Maximum Heat Dissipation ● Surge Overload Ratings to 400 Amperes ● These bridges are on the U/L Recognized Products List for currents of 10, 25 and 35 amperes MECHANICAL DATA

HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 800 Volts CURRENT - 15 to 35 Amperes)

VOLTAGE - 50 to 800 Volts CURRENT - 15 to 35 Amperes FEATURES • Plastic Case With Heatsink For Heat Dissipation • Surge Overload Ratings to 400 Amperes • The plastic package has Underwriters Laboratory Flammability Classification 94V-O

HIGH CURRENT SILICON BRIDGE RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 15 Amperes)

VOLTAGE - 50 to 800 Volts CURRENT - 15 to 35 Amperes FEATURES • Plastic Case With Heatsink For Heat Dissipation • Surge Overload Ratings to 400 Amperes • The plastic package has Underwriters Laboratory Flammability Classification 94V-O

STANDARD RECOVERY RECTIFIER 1.5 AMPERES 400 VOLTS

Surface Mount Standard Recovery Power Rectifier SMB Power Surface Mount Package Features mesa epitaxial construction with glass passivation. Ideally suited for high frequency switching power supplies; free wheeling diodes and polarity protection diodes. • Compact Package with J–Bend Leads Ideal

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar type For amplification of low-frequency output ■ Features • Two elements incorporated into one package (Emitter-coupled transistors) • Reduction of the mounting area and assembly cost by one half