Silicon-Bridge Rectifiers

Silicon-Bridge-Rectifiers • Nominal current 10 A • Alternating input voltage 35...700 V • Type: PB... 19 x 19 x 6.8 [mm] • Plastic case – Weight approx. 5.5 g • Type: PB...S 15.1 x 15.1 x 6.3 [mm] • Plastic case with Al-bottom – Weight approx. 3

10A SINGLE-PHASE BRIDGE RECTIFIER

Features ● Diffused Junction ● High Current Capability ● High Case Dielectric Strength ● High Surge Current Capability ● Ideal for Printed Circuit Board Application ● Plastic Material has UL Flammability 94V-0 ● Recognized File # E157705

10A SINGLE PHASE BRIDGE RECTIFIER

Diffused Junction High Current Capability High Case Dielectric Strength High Surge Current Capability Ideal for Printed Circuit Board Application Plastic Material has UL Flammability 94V-0 Recognized File # E157705

Square Type

Silicon-Bridge-Rectifiers Silizium-Br-kengleichrichter

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Silicon-Bridge-Rectifiers

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Single Phase Bridge Rectifier

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Single Phase Bridge Rectifier

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10A GLASS PASSIVATED SINGLE PHASE BRIDGE RECTIFIER

Glass Passivated Die Construction High Current Capability High Case Dielectric Strength High Surge Current Capability Ideal for Printed Circuit Board Application Plastic Material has UL Flammability 94V-0 Recognized File # E157705

Square Type

SUPER FAST RECOVERY RECTIFIER(VOLTAGE - 200 to 600 Volts CURRENT - 10.0 Amperes)

FEATURES • For thorough hole applications • Low profile package • Built-in strain relief • Easy pick and place • Superfast recovery times for high efficiency • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • Glass passivated junction • High temperature solde

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

Integrated Circuit FM IF TV Amp

Features: ● Excellent Limiting Characteristics ● High Gain ● High AM Rejection Ratio ● Wide Band Amp