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P879XBH

COMMERCIAL/EXPRESS HMOS MICROCONTROLLER

文件:1.18001 Mbytes Page:22 Pages

INTEL

英特尔

NPN Darlington transistors

DESCRIPTION NPN Darlington transistor in a TO-92 (SOT54) plastic package. PNP complement: BC878. FEATURES • High DC current gain (min. 1000) • High current (max. 1 A) • Low voltage (max. 80 V) • Integrated diode and resistor. APPLICATIONS • Relay drivers.

PHILIPS

飞利浦

NPN Silicon Darlington Transistors (High current gain Low collector-emitter saturation voltage

● High current gain ● Low collector-emitter saturation voltage ● Complementary types: BC 876, BC 878 BC 880 (PNP)

SIEMENS

西门子

NPN SILICON PLANAR DARLINGTON TRANSISTORS

NPN Silicon Planar Darlington Transistors BD875, BD877 and BD879 are epitaxial NPN silicon planar darlington transistors in TO 126 plastic package (12 A 3 DIN 41869, sheet 4). These darlington transistors are designed for relay drivers as well as for general AF applications. BD876 BD878 and BD880

SIEMENS

西门子

SILICON NPN EPITAXIAL TYPE TRANSISTOR

Description For 1.5V And 3V Electronic Flash Use. Features • Charger-up time is about 1 mS faster than of a germanium transistor. • Small saturation voltage can bring less power dissipation and flashing times.

HSMC

华昕

SILICON NPN EPITAXIAL TYPE TRANSISTOR

Description For 1.5V and 3v electronic flash use. Features • Charger-up time is about 1 ms faster than of a germanium transistor • Small saturation voltage can bring less power dissipation and flashing times

HSMC

华昕

P879XBH产品属性

  • 类型

    描述

  • 型号

    P879XBH

  • 制造商

    INTEL

  • 制造商全称

    Intel Corporation

  • 功能描述

    COMMERCIAL/EXPRESS HMOS MICROCONTROLLER

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