位置：首页 > IC中文资料第1526页 > P60P12I-E
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P12AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-60V,ID =-12A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 |   | ||
NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P12K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features ● VDS =-60V,ID =-12A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | | ||
Automotive grade standard power diode General description Standard reverse recovery power diode in a TO247-2L package. Features and benefits • Low forward voltage drop • Low leakage current • High voltage capability • High inrush current capability • Package meets UL94V-0 flammability requirement Applications • Input re | WEEN 瑞能半导体 | |
P60P12I-E产品属性
- 类型
描述
- 型号
P60P12I-E
- 制造商
TE Connectivity
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NCE/新洁能 |
2023+ |
TO252 |
5000 |
一级代理优势现货,全新正品直营店 |
|||
NCE |
1822+ |
TO-252 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
NCEPOWER |
22+ |
TO-252 |
100000 |
代理渠道/只做原装/可含税 |
|||
NCE(无锡新洁能) |
2024+ |
TO-252 |
12956 |
诚信服务,绝对原装原盘 |
|||
NCE/新洁能 |
24+ |
TO-252 |
502817 |
免费送样原盒原包现货一手渠道联系 |
|||
NCE Power(新洁能) |
24+ |
TO-252 |
19048 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
NCEPOWER |
20+ |
TO-252 |
880000 |
明嘉莱只做原装正品现货 |
|||
NCE/新洁能 |
23+ |
TO-252 |
12500 |
原装正品假一赔百 |
|||
NCE |
23+ |
TO-252 |
2506 |
现货库存,实单请给接受价格 |
|||
NCE POWER |
24+ |
con |
80 |
现货常备产品原装可到京北通宇商城查价格 |
P60P12I-E规格书下载地址
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DdatasheetPDF页码索引
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