位置：首页 > IC中文资料第1526页 > P60P12I-E
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P12AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-60V,ID =-12A RDS(ON) | NCEPOWER 新洁能 |   | ||
NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P12K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features ● VDS =-60V,ID =-12A RDS(ON) | NCEPOWER 新洁能 | | ||
Automotive grade standard power diode General description Standard reverse recovery power diode in a TO247-2L package. Features and benefits • Low forward voltage drop • Low leakage current • High voltage capability • High inrush current capability • Package meets UL94V-0 flammability requirement Applications • Input re | WEEN 瑞能半导体 | |
P60P12I-E产品属性
- 类型
描述
- 型号
P60P12I-E
- 制造商
TE Connectivity
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NCE新洁能 |
22+ |
TO-252 |
100000 |
新结能全线供应,支持终端生产 |
|||
NCEPOWER |
20+ |
明嘉莱只做原装正品现货 |
2510000 |
TO-252 |
|||
NCE Power(新洁能) |
24+ |
TO-252 |
19048 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
NCE/新洁能 |
21+ |
TO-252 |
30000 |
百域芯优势 实单必成 可开13点增值税 |
|||
NCE/新洁能 |
2223+ |
TO-252 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
NCE/新洁能 |
2511 |
TO-252 |
360000 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
NCE/新洁能 |
23+ |
SOP-8 |
12500 |
原装正品，实单请联系 |
|||
NCE |
21+ |
TO-252 |
10000 |
原装现货假一罚十 |
|||
NCE/新洁能 |
23+ |
TO-252 |
12500 |
原装正品假一赔百 |
|||
NCE |
24+ |
TO-252 |
21870 |
原装现货17377264928微信同号 |
P60P12I-E规格书下载地址
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DdatasheetPDF页码索引
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