位置：首页 > IC中文资料 > P60NE06-16
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
P60NE06-16 | N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique Single Feature Size strip-based process. The resulting transistor shows extremely high packing density for low onresistance,rugged avalance characteristics and less critical alignment steps therefore a remarkable | STMICROELECTRONICS 意法半导体 |   | |
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique ” Single Feature Siz™ ” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable | STMICROELECTRONICS 意法半导体 | | ||
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique Single Feature Size strip-based process. The resulting transistor shows extremely high packing density for low onresistance,rugged avalance characteristics and less critical alignment steps therefore a remarkable | STMICROELECTRONICS 意法半导体 | | ||
N-Channel 60-V (D-S) MOSFET 文件：981.42 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
isc N-Channel MOSFET Transistor 文件：245.27 Kbytes Page：2 Pages | ISC 无锡固电 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
24+ |
TO220 |
30000 |
原装正品公司现货,假一赔十! |
|||
PHI |
2018+ |
DIP16 |
110 |
||||
ST |
21+ |
TO220 |
10000 |
只做原装,质量保证 |
|||
ST |
25+ |
T0-220 |
4500 |
全新原装、诚信经营、公司现货销售! |
|||
ST |
23+ |
TO-220 |
16900 |
正规渠道,只有原装! |
|||
T0-220 |
8000 |
原装长期供货! |
|||||
ST |
25+ |
TO-220 |
18000 |
原厂直接发货进口原装 |
|||
24+ |
1 |
自己现货 |
|||||
ST/进口原 |
17+ |
TO-220 |
6200 |
||||
ST |
2021+ |
TO220 |
7600 |
原装现货，欢迎询价 |
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P60NE06-16规格书下载地址
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P60NE06-16数据表相关新闻
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2019-2-19
DdatasheetPDF页码索引
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