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型号 功能描述 生产厂家 企业 LOGO 操作
P4KE480A-AT

Transient Voltage Suppressors

Features ■ Glass passivated junction ■ Low inductance ■ Excellent clamping capability ■ 400W peak pulse power capability at 10/1000μs waveform, repetition rate (duty cycle): 0.01% ■ Fast response time ■ Typical IR less than 1μA above 12V ■ High Temperature soldering guaranteed: 265℃/10

YAGEO

国巨

P4KE480A-AT

瞬态抑制二极管 (车用)

YAGEO

国巨

TRANSZORB® Transient Voltage Suppressors

FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 400 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate (duty cycle): 0.01 • Excellent clamping capability • Very fast response time • Low incremental surge resistance • Sold

VISHAYVishay Siliconix

威世威世科技公司

TRANSZORB® Transient Voltage Suppressors

FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 400 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate (duty cycle): 0.01 • Excellent clamping capability • Very fast response time • Low incremental surge resistance • Sold

VISHAYVishay Siliconix

威世威世科技公司

Transient Voltage Suppression Diodes

Description The P4KE Series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events. Features • Halogen-free • Rohs compliant • Typical maximum temperature coefficient • ΔVBR =0.1xVBR@25°

LITTELFUSE

力特

Silicon Avalanche Diodes - 400W Axial Leaded Transient Voltage Supressors

Description The P4KE Series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events. Features • VBR @TJ= VBR@25°C × (1+αTx (TJ - 25)) (αT: Temperature Coefficient) • Glass passivated chip junction in DO-

LITTELFUSE

力特

Silicon Avalanche Diodes - 400W Axial Leaded Transient Voltage Supressors

Description The P4KE Series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events. Features • VBR @TJ= VBR@25°C × (1+αTx (TJ - 25)) (αT: Temperature Coefficient) • Glass passivated chip junction in DO-

LITTELFUSE

力特

更新时间:2026-3-17 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
YAGEO
25+
DO-204AL(DO-41)
59948
样件支持,可原厂排单订货!
YAGEO
25+
DO-204AL(DO-41)
50000
正规渠道,免费送样。支持账期,BOM一站式配齐
YJ
19+
10000
原装现货支持BOM配单服务
VISHAYMAS
25+23+
DO-41
53095
绝对原装正品现货,全新深圳原装进口现货
捷捷微
24+
DO-41
50000
只做原装,欢迎询价,量大价优
23+
62782
原厂授权一级代理,专业海外优势订货,价格优势、品种
VISHAY
24+
DO-41
36500
一级代理/放心采购
硕凯SOCAY
25+
DIP
3000
国产替换现货降本
YANGJIE/扬杰科技
24+
DO-41
50000
全新原装,一手货源,全场热卖!
LEIDITECH(雷卯)
24+
con
10000
查现货到京北通宇商城

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