位置:首页 > IC中文资料第6461页 > P401KW
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
P401KW | PASSIVATED ASSEMBLED CIRCUIT ELEMENTS Description The P400 series of Integrated Power Circuits consists of power thyristors and power diodes configured in a single package. With its isolating base plate, mechanical designs are greatly simpli fied giving advantages of cost reduction and reduced size. Applications include power su | IRF | ||
IN-LINE MINIATURE SINGLE PHASE SILICON BRIDGE(VOLTAGE - 50 to 800 Volts CURRENT - 4.0 Amperes) FEATURES • Plastic material has Underwriters Laboratory Flammability Classification 94V-O • Ideal for printed circuit board • Reliable low cost construction utilizing molded plastic technique • Surge overload rating: 200 Amperes peak • Pb free product are available : 99 Sn above can meet Rohs | PANJIT 強茂 | |||
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances res | POLYFET | |||
Fast Settling, Wideband High-Gain Monolithic Op Amp 文件:388.71 Kbytes Page:6 Pages | NSC 国半 | |||
Fast Settling, Wideband High-Gain Monolithic Op Amp 文件:388.71 Kbytes Page:6 Pages | NSC 国半 | |||
Fast Settling, Wideband High-Gain Monolithic Op Amp 文件:388.71 Kbytes Page:6 Pages | NSC 国半 |
P401KW产品属性
- 类型
描述
- 型号
P401KW
- 制造商
IRF
- 制造商全称
International Rectifier
- 功能描述
PASSIVATED ASSEMBLED CIRCUIT ELEMENTS
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
专业模块 |
MODULE |
8513 |
模块原装主营-可开原型号增税票 |
|||
IR |
23+ |
MODULE |
8000 |
只做原装现货 |
|||
IR |
23+ |
MODULE |
7000 |
||||
IR |
22+ |
MODULE |
6000 |
终端可免费供样,支持BOM配单 |
P401KW规格书下载地址
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P401KW数据表相关新闻
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2019-9-15P35-4304-000-200-模拟杂项
特点 ·宽带0.5 - 16GHz的 ·低插入损耗;4分贝的典型值在8GHz的 ·衰减0.5dB步进到31.5分贝 ·开关速度快 ·通过提高性能的砷化镓过孔 P35 -4304-000 -200是一种高性能砷化镓单片提供6位数字衰减器的衰减步长为0.5dB31.5分贝范围。它是适用于宽带通信,仪器仪表和电子战的使用应用。衰减器是免费0V/-5V或0/-8V信号控制线的应用程序来控制按照下面的真值表。通过修改控制线,实现全衰减范围组合。模具制造,使用建设部0.5mm栅极长度的MESFET制程(S20)。它是完全
2012-12-20
DdatasheetPDF页码索引
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