N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex

N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

N-CHANNEL 6A - 600V - TO-220/TO-220FP/D2PAK SHORT CIRCUIT PROOF PowerMESH TM IGBT

DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “K” identifies a family optimized for high frequency motor control applications with

N-CHANNEL 6A - 600V - DPAK PowerMESH TM IGBT

DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the Power MESH™ IGBTs, with outstanding perfomances. ■ HIGH INPUT IMPEDANCE ■ OFF LOSSES INCLUDE TAIL CURRENT ■ LOW GATE CHARGE ■ HIGH FREQUENCY

N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMES TM IGBT

DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “K” identifies a family optimized for high frequency motor control applications with

N-CHANNEL 3A - 600V - TO-220/TO-220FP/D2PAK PowerMESH TM IGBT

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N-CHANNEL 3A - 600V - DPAK PowerMESH TM IGBT

文件：305.96 Kbytes Page：9 Pages