位置：首页 > IC中文资料第8841页 > P30N03A
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
30V N-Channel Power Features VDS = 30V,ID =90A RDS(ON),3.9 mΩ(Typ) @ VGS =10V RDS(ON), 6.5mΩ(Typ) @ VGS =4.5V Low on resistance Low gate charge Fast switching Low reverse transfer capacitances | UMW 友台半导体 |   | ||
30V N-Channel Power General Description These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. Features VDS = 30V,ID =90A RDS(ON),3.9 mΩ(Typ) @ VGS =10V RDS(ON), 6.5mΩ(Typ) @ VGS =4.5V Low on | EVVOSEMI 翊欧 | | ||
N-Channel 30-V (D-S) MOSFET 文件：1.01839 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
30A竊?0V N-CHANNEL MOSFET 文件：235.42 Kbytes Page：5 Pages | KIA 可易亚半导体 | | ||
N-Channel 30-V (D-S) MOSFET 文件：1.0152 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | |
P30N03A产品属性
- 类型
描述
- 型号
P30N03A
- 制造商
MEGAMOS INT'
- 功能描述
30N03A
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SIEMENS/西门子 |
23+ |
TO252 |
50000 |
全新原装正品现货,支持订货 |
|||
VBsemi |
21+ |
TO251 |
10065 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
AP |
24+ |
TO-252 |
60000 |
原装正品优势优价 |
|||
友台UMW |
25+ |
DIP |
2500 |
国产替换现货降本 |
|||
JCW |
23+ |
TO-252 |
111999 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
VBsemi |
24+ |
TO251 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
24+ |
N/A |
58000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
ON |
10+ |
DIP |
7800 |
全新原装正品,现货销售 |
|||
HARRIS/哈里斯 |
24+ |
TO-252 |
30000 |
只做正品原装现货 |
|||
FAIRCHILD/仙童 |
23+ |
TO252 |
3000 |
原装正品假一罚百!可开增票! |
P30N03A规格书下载地址
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DdatasheetPDF页码索引
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